FDP047N08-F102

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The FDP047N08-F102 is a type of metal oxide semiconductor field effect transistor (MOSFET). A MOSFET is a semiconductor device that is used to control electric current in circuits. It acts as an electronically-controlled switch, allowing current to flow between two terminals in a circuit when a voltage is applied to the gate terminal. The FDP047N08-F102 is designed for power switching applications, such as in the control of motors, lamps, and other electrical appliances. It is a N-channel enhancement mode MOSFET, meaning that the current flow between source and drain is enhanced when a voltage is applied to the gate. It is an Logic Level FET, meaning that it is designed to operate at low gate voltages and can be controlled with low-power logic signals, making it ideal for power switch applications. The FDP047N08-F102 features a low threshold voltage, fast switching speed, and low on-resistance. The low threshold voltage means that it requires a relatively low voltage to turn it on. The fast switching speed allows it to switch off quickly, preventing power surges and allowing it to be used in high-power applications. The low on-resistance ensures that less power is lost in the switching process. The FDP047N08-F102 is a dual die device with two independent MOSFET chips in a single package, offering more efficient switching in power applications. It operates at a wide range of temperatures from -55°C to +175°C, making it suitable for use in extreme environments. It has a Drain-Source voltage rating of 80V, and a current rating of 47A. It has a maximum power dissipation of 230W and a maximum on-resistance of 0.024Ω. The FDP047N08-F102 is a versatile device with a wide range of applications. It can be used in motor control, lamp control, DC-DC converters, power supply systems, solenoid control and other industrial applications. It can also be used in consumer electronics, such as in laptop and television power supplies, as well as in automotive and aerospace applications. In summary, the FDP047N08-F102 is a type of metal oxide semiconductor field effect transistor (MOSFET) designed for power switching applications. It features a low threshold voltage, fast switching speed, and low on-resistance. It is a dual die device and operates at a wide range of temperatures, making it suitable for use in extreme environments. It has a wide range of applications, from consumer electronics to automotive and aerospace applications.

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