Allicdata Part #: | FDP045N10A-F102-ND |
Manufacturer Part#: |
FDP045N10A-F102 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 120A TO-220-3 |
More Detail: | N-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO... |
DataSheet: | FDP045N10A-F102 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 263W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5270pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FDP045N10A-F102 is a logic level field-effect transistor (FET) manufactured by the leading semiconductor company ON Semiconductor. It is a Power MOSFET which is used in a variety of applications including voltage conversion, charge pumps, and load switches. This article will discuss the application fields and working principle of the FDP045N10A-F102.
Application Fields
The FDP045N10A-F102 is a logic-level gate-transistor that can be used in low-frequency power conversion applications such as voltage converters, pulsed loads, and load switches. The transistor is also suitable for general-purpose usage, such as driving power FETs or MOSFETs, as well as for synchronous rectifying circuits in non-power management applications. This transistor is a great choice for automated power management applications as it has a low ON-resistance and will allow significant power savings in these scenarios. In addition, the FDP045N10A-F102 is quick and easy to implement, making it an ideal choice for a wide range of applications.
Working Principle
The FDP045N10A-F102 is a type of MOSFET which is used in a variety of applications including voltage conversion, charge pumps, and load switches. A MOSFET works by modulating the conductance of a channel between two terminals called the source and drain. By applying a voltage between the gate and source of the device, a MOSFET is able to control the flow of current between the drain and source, which determines the overall electrical performance of the circuit. The FDP045N10A-F102 has an optimized charge balance, very low gate charge, and gate-source capacitance, which provides improved switching performance versus traditional FETs.
Additionally, the FDP045N10A-F102 has an integrated temperature compensatory circuit which helps maintain proper channel temperature during normal operations. This feature also helps with accurate current regulation and therefore helps to extend the life of the device, as well as saving additional power losses in the circuit.
Essentially, the working principle of the FDP045N10A-F102 is very simple. By applying a voltage between the gate and source of the device, it can modulate the conductance of a channel between the drain and the source, which results in a certain electrical performance. Additionally, the temperature compensatory circuit helps to maintain proper channel temperature during operations and also helps to increase the life and efficiency of the device.
Conclusion
The FDP045N10A-F102 is an ideal solution for low-frequency power conversion applications due to its low ON-resistance and ease of implementation. Furthermore, it has an optimized charge balance and integrated temperature compensating circuit, which allows for improved switching performance and power saving during operations. Therefore, it is an excellent choice for a wide range of applications requiring power management features.
The specific data is subject to PDF, and the above content is for reference
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