FQB44N10TM Discrete Semiconductor Products |
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Allicdata Part #: | FQB44N10TMTR-ND |
Manufacturer Part#: |
FQB44N10TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 43.5A D2PAK |
More Detail: | N-Channel 100V 43.5A (Tc) 3.75W (Ta), 146W (Tc) Su... |
DataSheet: | FQB44N10TM Datasheet/PDF |
Quantity: | 50 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 146W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 21.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FQB44N10TM is a low-cost single N-channel MOSFET for general purpose switching and amplifier applications, the device is characterized by its low on-resistance RDS(on) and low driving power. FQB44N10TM has a fast switching speed, low threshold voltage and small on-resistance make it an ideal choice for general purpose applications.
1.Application Field of FQB44N10TM
FQB44N10TM mainly has the following application fields:
- General purpose switching applications
- Power management
- Motor control
- Audio amplifier
In general, FQB44N10TM is ideal for general purpose applications that require low voltage, low on-resistance switching and amplifier of audio signals.
2.Working Principle of FQB44N10TM
FQB44N10TM is an N-channel MOSFET, which means that it has a single n-type conducting channel instead of several p-type channels like a P-MOSFET. This provides the FQB44N10TM an improved ability to gate current compared to the P-MOSFET. It is constructed with a single n-type conducting channel region between the source and drain regions, yielding an improved on-resistance RDS(on).
The FQB44N10TM MOSFET is used to provide low voltage switching with a low gate turn-on threshold of only 4V. This means that the FQB44N10TM only needs a small amount of voltage to switch on and begin to conduct current. This also enables the FQB44N10TM to switch on faster than traditional PMOSFETs.
When the gate of the FQB44N10TM MOSFET is supplied with a positive voltage (VGS > 4V) it inverts the polarity of the n-type channel, allowing electrons to flow between the source and drain regions. The current flow is controlled by the current driving capability of the gate voltage, and can carry a maximum of 13A continuous. This makes the FQB44N10TM ideal for applications that require low voltage, low on-resistance switching.
3.Conclusion
The FQB44N10TM is a low cost, single N-channel MOSFET that provides excellent performance in general purpose switching and amplifier applications. It is characterized by its low on-resistance RDS(on) and low driving power. It has a fast switching speed and small on-resistance that makes it convenient for general purpose applications.
The specific data is subject to PDF, and the above content is for reference
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