Allicdata Part #: | FQB4N20LTM-ND |
Manufacturer Part#: |
FQB4N20LTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 3.8A D2PAK |
More Detail: | N-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Surf... |
DataSheet: | FQB4N20LTM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.35 Ohm @ 1.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQB4N20LTM is a surface mount, N-Channel MOSFET transistor designed to provide high-speed switching and low on-resistance in a small package. This device is suitable for a variety of applications including surface mount switching circuits, power supplies, and motor control.
The FQB4N20LTM is a N-Channel MOSFET transistor that utilizes an N-type Silicon substrate for its construction. This device utilizes the well-known MOSFET design principle of gate control to provide an effective switching device. VDS, or Drain-Source Voltage, is the voltage differential between the Drain and Source of the MOSFET that allows current flow when the Gate of the MOSFET is activated with a voltage. The device has a breakdown voltage of 20 Volts, or VBR, with a maximum drain current of 4 Amps, or ID.
The FQB4N20LTM is a low current, high speed switch, capable of operating with a maximum switching frequency of 240MHz. With a typical turn-on time of 4ns and a typical turn-off time of 7ns, this device provides fast switching times, making it suitable for high-speed switching applications. The device also exhibits low on-resistance, with a minimum on-resistance of 0.85 Ohms and a maximum on-resistance of 1.25 Ohms.
As an additional feature, the FQB4N20LTM has a level shift gate drive capability, meaning that it can be used to drive low voltage logic circuitry such as 3.3V or 5V logic. This allows the device to be used with a variety of logic voltage levels and enables the design of circuits that use a mix of logic voltages. Additionally, the FQB4N20LTM features an over temperature protection feature which is designed to protect the device from severe temperature increases, allowing it to remain operational even under extended high-temperature operating conditions.
The FQB4N20LTM can be used for a variety of applications, such as surface mount switching circuits, power supplies, and motor control. The low on-resistance and high-speed switching capabilities of the device make it suitable for high-efficiency power supplies, while its logic level tolerant gate drive makes it an excellent choice for surface mount switching circuits. The device is also well-suited for motor control applications due to its fast switching times and over temperature protection feature.
The FQB4N20LTM is an excellent choice for a variety of applications due to its low on-resistance, high-speed switching, and level shift gate drive capabilities. This device is suitable for surface mount switching circuits, power supplies, and motor control applications, and its over temperature protection feature makes it an excellent choice for applications that are subject to extended high-temperature operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQB4N20TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 3.6A D2P... |
FQB4N25TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 3.6A D2P... |
FQB4P25TM | ON Semicondu... | -- | 1000 | MOSFET P-CH 250V 4A D2PAK... |
FQB4N20LTM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 3.8A D2P... |
FQB4N50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 3.4A D2P... |
FQB4P40TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 400V 3.5A D2P... |
FQB4N90TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 900V 4.2A D2P... |
FQB46N15TM_AM002 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 45.6A D2... |
FQB45N15V2TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 45A D2PA... |
FQB47P06TM-AM002 | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 47A D2PAK... |
FQB4N80TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 3.9A D2P... |
FQB44N10TM | ON Semicondu... | -- | 50 | MOSFET N-CH 100V 43.5A D2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...