FQB4N25TM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQB4N25TM is a special type of transistor. It belongs to the family of transistors known as Field Effect Transistors (FETs) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). FQB4N25TM is the smallest device among all the available FETs and MOSFETs. FQB4N25TM has the capacity to switch up to 250V DC load. It also has low on-resistance and low leakage current. Its package options include Mini-DIP, PBGA, MSOP and SOIC.

FQB4N25TM is mainly used in power supply designs. The high voltage capacity, low on-resistance and low leakage current of FQB4N25TM makes it suitable for controlling high power and high voltage applications. It is widely used in the control and regulation of power supplies, motor and relay control, high voltage switching applications and spike protection circuits. It has been used in computer monitors, high definition televisions, and digital video recorders.

FQB4N25TM also finds application in electronic circuits as a key component of relays and other switching devices. It can also be used as a power switch in audio amplification circuits and radio frequency systems. Moreover, it can be used as a switching element in other electronic systems such as automotive electronics, home appliances, and other industrial applications.

The working principle of a FQB4N25TM device is the same as for any other type of FETs and MOSFETs: It is a three-terminal, unipolar device that works on the principle of shifting a DC voltage across a gate terminal, in order to create a current flow from source to drain. Basically, when a positive voltage is applied to the gate terminal, the device will conduct current from the source to the drain. The drain terminal is connected to the load, which can be either AC or DC. FQB4N25TM also has the advantage of being able to control the source-drain current with the help of current limiting resistors.

The main advantage of FQB4N25TM over other FETs and MOSFETs is its small size and low cost. This makes it suitable for many applications, including those where space and cost are limited. Additionally, FQB4N25TM devices have a very low power dissipation. This means that they are more efficient at converting energy from the source to the load, and also less prone to overheating and damage.

In conclusion, FQB4N25TM is a very versatile device that can be used in a variety of applications involving power switching. Its small size makes it ideal for use in applications where space is a major constraint. It is also highly efficient and has the low power dissipation required for many applications. All in all, FQB4N25TM has become a popular choice for many applications that require its features.

The specific data is subject to PDF, and the above content is for reference