Allicdata Part #: | FQB4N80TMTR-ND |
Manufacturer Part#: |
FQB4N80TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 3.9A D2PAK |
More Detail: | N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Sur... |
DataSheet: | FQB4N80TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 880pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.95A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FQB4N80TM is a fast switching and low gate-drive single N-channel MOSFET used to enhance speeds of inversion and perform logic functions. Its low RDS(ON) and fast switching times make it useful in a wide range of applications, such as high-frequency switching and hard-switching systems. This MOSFET is a great choice for power supplies, memory power amplifiers, microcontrollers, and general-purpose switching in a variety of applications.
The FQB4N80TM MOSFET features a low Rdson, which is the amount of resistance when the FET is energized. With a maximum Rdson of 0.7Ω, the FQB4N80TM is able to deliver excellent performance at high current levels. Additionally, the low Rdson makes this FET suitable for high switching frequencies, making it a great choice for motor control and power supplies. The device also has a fast turn-on and turn-off time, which are just a few nanoseconds, allowing it to provide quick, reliable switching operations.
The SOT-23 package of the FQB4N80TM is an inherently small size, making it useful when space is limited. Furthermore, the FET offers a high level of thermal stability, making it capable of working in environments with wide temperature swings. It can also handle up to 33V of drain-source voltage and has an excellent ESD rating of up to 8kV.
The FQB4N80TM MOSFET works by having a positive voltage applied to the gate terminal and the source terminal negative. This allows the FET to go from an off state to an on state and conduct current between the source and drain terminals. Since the FET is an n-type device, the gate terminal will be negative in order to turn the FET to off state again. The FET gate voltage will work in the range of -33V to 0V. This means that the FET’s gate can be used to control the amount of current flowing between the source and drain terminals.
The FQB4N80TM MOSFET is a great choice for applications that require fast switching, low Rdson and space saving. It can be used in a wide range of applications, such as motor and power supplies, memory power amplifiers, microcontrollers, and general purpose switching. This device has a low power consumption, fast switching time and compact SOT-23 package, making it the perfect choice for applications that require reliability and performance.
The specific data is subject to PDF, and the above content is for reference
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