FQB4N90TM

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FQB4N90TM is a kind of discrete N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) which is mainly used in power switching applications. It is manufactured by Fairchild Semiconductor, one of the leading global suppliers of semiconductors and passive components.

The FQB4N90TM is composed of a monolithic N-channel MOSFET in a B-Pak package. It has a drain-source voltage of 90V, drain current up to 8A @ 25 ℃, an output capacitance of 11.4pF @ 10V, and an on-resistance of 90mΩ @ 8A. It also has a gate-source voltage of ±20V, a dielectric breakdown voltage of 600V and a junction-to-ambient thermal resistance of 57°C/W.

The primary application field of FQB4N90TM is power switching. The typical use of FQB4N90TM is in low-loss, mobile and battery-powered devices. It is also used in applications where efficient current regulation is required.

The working principle of FQB4N90TM is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) technology. The MOSFET is composed of a source and a drain that are connected by a conductive channel. The channel is formed by forming an extremely thin layer of an insulating material (metal oxide) on the semiconductor surface. The channel is modulated by applying a voltage to the gate electrode which controls the current flowing through the channel. The advantage of MOSFET is that it has a very low gate capacitance, which leads to low switch-on and switch-off times, thus providing high switching speed.

The FQB4N90TM features high-speed switching, low drain-source on-resistance and high breakdown voltage. Its low gate charge and low output capacitance also make it an ideal solution for power switching applications. Its fast switching time and flexibility in controlling current and voltage also play an important role in its various applications.

In summary, FQB4N90TM is a popular discrete N-channel MOSFET which is mainly used in power switching applications. It has a drain-source voltage of 90V, an output capacitance of 11.4pF @ 10V and an on-resistance of 90mΩ @ 8A. Its working principle is based on the MOSFET technology which provides fast switching speed, low drain-source on-resistance, high breakdown voltage and low gate charge.

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