FQB4N20TM Discrete Semiconductor Products

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FQB4N20TM is a high voltage, fast switching, N-channel, shielded metal oxide semiconductor field effect transistor (MOSFET). It is a popular device in power and switching applications. The FQB4N20TM has been designed to provide superior performance over standard CMOS transistors. It has very high current capacity, low gate threshold voltage, and a wide range of applications.

The FQB4N20TM is a power MOSFET which utilizes a gate electrode to switch between high and low resistance states. A gate electrode is created by a deposited layer of aluminum (Al) metal between the source and drain of the MOSFET. This metal gate allows for precise control over the current flow between source and drain. An additional advantage of this metal gate is its very small size, which makes it ideal for use in high-density applications.

The FQB4N20TM is designed to be capable of both switching and amplifier functionality. In this type of application the device is used as a switch that alternates between allowing and blocking current flow. When current flows through the FQB4N20TM, the voltage at its gate increases, while the drain-source current increases linearly. This effect can be used to switch large currents with low voltage signals.

The FQB4N20TM also has applications in power conversion and regulation. Its high drain-source breakdown voltage and low gate-source capacitance make it well suited for high voltage applications. The device is also used as an amplifier in audio and video applications. Its low on-resistance and high transconductance allow for amplification of small signals with high efficiency.

The FQB4N20TM is also well-suited for use in high-speed switching applications. Its low gate capacitance results in low switching times, which is a critical factor when performing high-speed switching. This feature will often be used in applications such as switching power supplies.

Due to its robust construction, the FQB4N20TM is well suited for most of today’s high-power applications. Its low on-resistance and high operating temperature range make it suitable for many temperature-sensitive applications. Additionally, its ability to operate at a high gate voltage ensures a higher current capacity.

In conclusion, the FQB4N20TM is an excellent power MOSFET for a wide range of applications. It provides high current capacity, low gate threshold voltage and low switching times. It has applications in switching, power regulation and amplifier circuits. Its rugged construction and high operating temperature range make it suitable for many high-power and temperature-sensitive applications.

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