FQB45N15V2TM

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3030pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	94nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	40 mOhm @ 22.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FQB45N15V2TM is a type of Field Effect Transistor (FET), is a type of transistor that relies on an electric field to control the flow of current. This type of transistor is widely used in analog circuits to amplify small signals, power supplies, and switching circuits. As the name suggests, FQB45N15V2TM is a MOSFET (Metal Oxide Semiconductor FET) which is an insulated-gate type of FET. A FQB45N15V2TM is designed to effectively switch voltages up to 45V and currents up to 15A. It is easy to use and versatile, making it an ideal choice for many applications. It can be used in various applications such as power control, motor control, audio amplifiers, sensing circuits, and voltage regulation. The main purpose of FQB45N15V2TM is to control the flow of current in a circuit, which is also known as a switch. FQBs can operate both as an N-channel FET, meaning current flows through the channel when the gate voltage is positive, and as a P-channel FET, meaning current flows through the channel when the gate voltage is negative. FQBs are commonly used in both AC and DC circuits, as they are able to handle large power loads. The working principle of FQB45N15V2TM is the same as any other MOSFET. The FQB consists of four terminals, the drain, the source, the gate, and the substrate. The source is typically connected to the negative terminal, and the drain is connected to the positive terminal. A voltage from the power source is then applied between the source and the drain, and a small voltage is applied to the gate. This small voltage controls the current between the source and the drain, by controlling the electrical field generated in the channel. When a small voltage is applied to the gate, electrons are attracted, creating an electric field in the channel between the source and the drain. This electric field is known as the “breakdown voltage” and is used to control the voltage and current through the FET. When the gate voltage is positive, current will flow through the N-channel and when the gate voltage is negative, current will flow through the P-channel. FQB45N15V2TM is ideal for applications that require power control, motor control, and other power related operations. It is easy to use and highly efficient, making it ideal for many applications. It can be used in power switching applications, audio amplifiers, sensing circuits, voltage regulation, and many other applications. FQB45N15V2TM is a versatile, easy-to-use type of MOSFET that can be used in many applications. It is an ideal choice for applications that require power control and switching, as it has excellent heat dissipation and can handle high power loads. It is also an excellent choice for applications that require audio amplifiers and voltage regulation. As it is relatively inexpensive and highly efficient, it is becoming a popular choice for hobbyists and professionals alike.

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