Allicdata Part #: | FQB4P25TM-ND |
Manufacturer Part#: |
FQB4P25TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 250V 4A D2PAK |
More Detail: | P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surfac... |
DataSheet: | FQB4P25TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB4P25TM is a type of Field Effect Transistor (FET) that is specifically designed to work in high powered industrial applications. It is the most advanced FET available in the market, featuring a high voltage breakdown voltage (BVDSS of 25V) and high temperature operation. It is an ideal component for switching and linear applications.
A FET is a three terminal device that has an insulated gate. It works the same way as bipolar transistors, with the difference being that the current flow is controlled by a field effect between the gate and source terminals instead of the emitter-base junction used by a bipolar transistor. Basically it acts like a voltage-controlled switch that can be used to regulate current through the drain to source terminals.
The FQB4P25TM is a P-channel device, which means that the current flows from source to drain when a positive voltage is applied to the gate terminal. This makes it a great component for switching between high voltage loads in power management and signal processing applications. It has a high breakdown voltage (BVDSS) of 25V and a low On-state resistance (RDS(on)) that allows for low power dissipation and efficient operation.
The working principle behind the FQB4P25TM is relatively simple. When a positive voltage is applied to the gate terminal, it creates an electric field between the drain and the source terminals and this field modulates the current flowing through the device. This in turn can be used to regulate current flow in a circuit or to switch loads.
The FQB4P25TM is a great component for industrial applications due to its high temperature operating capabilities (up to 175 °C) and its low on-state resistance (RDS(on)) of only 0.15Ω in the standard configuration. Its high breakdown voltage makes it suitable for high voltage settings. Additionally, it has a maximum load current of up to 8A, making it ideal for switching high power loads.
Therefore, the FQB4P25TM can be a great solution for the design of power management and signal processing systems. Its performance, reliability and high power handling capabilities make it an ideal component for industrial applications.
The specific data is subject to PDF, and the above content is for reference
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