FQB47P06TM-AM002 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.75W (Ta), 160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3600pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	26 mOhm @ 23.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	47A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQB47P06TM-AM002 Application Field and Working PrincipleFQB47P06TM-AM002 is a high voltage N-Channel enhancement mode vertical D-MOSFET which is developed for high side load switching applications in automotive electronic control units. With its low on-resistance, good avalanche and dv/dt capability and its very low gate charge, it is optimized for applications with high load current capability, high efficiency and low EMI. The device is AEC-Q101 qualified. General DescriptionFQB47P06TM-AM002 is an N-Channel enhancement mode vertical D-MOSFET which has been designed for high side load switching applications. The gate of the device connects to the drain terminal and is driven with a high side gate driver. The gate of the device is based on a vertical Zener diode clamp. This need for a higher gate voltage compared to a standard enhancement mode MOSFET. The device can be turned on with a gate voltage as low as 6V and can be driven fast and keep switch losses low. The very low gate charge is optimized for very high frequency applications.Features- Low On-Resistance - High Avalanche and dv/dt Capability - Very Low Gate Charge- AEC-Q101 Qualified- High Efficiency and Low EMIApplication FieldFQB47P06TM-AM002 can be used in various applications such as; automotive power supplies, charging systems, DC/DC converters, lighting, and other high side load switching applications.Working PrincipleThe working principle of the FQB47P06TM-AM002 is based on the same principles as other transistors. It features two regions, a source and a drain, where a voltage is applied to the gate, creating an electrical field that attracts electrons from the source. The movement of electrons from the source to the drain is controlled by the electrical field. The on-resistance of the device is low and it has good avalanche and dv/dt capability, which provides high efficiency and low EMI. The low gate charge allows for faster switching and lower losses. The device is also AEC-Q101 qualified, which makes it suitable for automotive applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description