Allicdata Part #: | HFA3127R96-ND |
Manufacturer Part#: |
HFA3127R96 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America Inc. |
Short Description: | IC TRANS ARRAY 5X NPN 16QFN |
More Detail: | RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mo... |
DataSheet: | HFA3127R96 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 5 NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 3.5dB @ 1GHz |
Gain: | -- |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 2V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-VFQFN Exposed Pad |
Supplier Device Package: | 16-QFN (3x3) |
Base Part Number: | HFA3127 |
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HFA3127R96 is an NPN silicon bipolar junction transistor that is commonly used in the field of radio frequency. This device is an integrated circuit specifically designed for applications that require the operation at high frequencies such as radio, microwave, and others. It has a high breakdown voltage and low output impedance which makes it suitable for use in critical applications such as high power radio transmitters.
The HFA3127R96 is specifically designed to operate in radio frequency bands of up to 3GHz and is suitable for use in high linearity and high frequency power amplifiers (PA). It has an output power of 5W and its compression ratio is 7dB. Its supply voltage range is also relatively wide, starting at 13V up to 24V. It also features an operation temperature range of -40C to +85C.
The working principle behind the HFA3127R96 lies in its transistor operation. This device is a three lead semiconductor device with the base, collector and emitter which are the two terminals used in the conventional transistor configuration. The current flow through the transistor is regulated by either one of two methods, depending on the transistor\'s configuration. In its common emitter configuration, the current is regulated by the voltage applied to the base, while in the common base configuration, the current is regulated by the voltage applied to the emitter. Basically, the current thus depends on the applied voltage at the controlling terminal.
In addition to its high frequency operation and high linearity, the HFA3127R96 can also be used in various applications that require high power, such as RF amplifiers, high power radio transmitters, pulse circuitry, and more. It can also be used as a switching device for such applications, controlling the power flow through it. Furthermore, it can be used as a voltage regulator, controlling the voltage output from the transistors.
The HFA3127R96 is a rugged device and can survive harsh environmental conditions. It has been designed to work in temperatures up to +85C, making it suitable for use in extreme environments. It is also immune to static electric shocks which makes it suitable for use in areas with high static electricity. Furthermore, it is also resistant to short term radiation and is capable of handling high voltages and currents.
Due to its distinct advantages, the HFA3127R96 is widely used in various applications. It finds its use in many radio transmitters, radio receivers, oscillators, amplifiers, power amplifiers, switching circuits, linear regulators, voltage regulators, and many more. Hence, the HFA3127R96 is an essential transistor for many applications, offering a wide range of features and benefits.
The specific data is subject to PDF, and the above content is for reference
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