Allicdata Part #: | IPA029N06NXKSA1-ND |
Manufacturer Part#: |
IPA029N06NXKSA1 |
Price: | $ 1.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V TO220-3 |
More Detail: | N-Channel 60V 84A (Tc) 38W (Tc) Through Hole PG-TO... |
DataSheet: | IPA029N06NXKSA1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.16138 |
Vgs(th) (Max) @ Id: | 3.3V @ 75µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO220-FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5125pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 84A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPM029N06NXKSA1 (hereinafter referred to as the "device") is a single-exchange transistor that economically combines several essential circuit elements, including a bipolar junction transistor, a field-effect transistor (FET), and an integrated circuit (IC). It is primarily used in power management and audio/video products.
The IPM029N06NXKSA1 is an ideal solution for applications that require a switch, and features an MOSFET field effect transistor with a combination common source and common gate configuration. It also has a built-in integrated circuit (IC) for maximum efficiency.
The device is designed for use with a 3.3 VDC, where the output port (L-OUT) can be easily switched controlled. Due to its low quiescent current, the device exhibits excellent power efficiency, and provides superior noise immunity and low heat dissipation characteristics. As a result, it is a good choice for applications that demand high performance, while still providing cost-effective solutions.
The working principle of the IPM029N06NXKSA1 is based on the following components:
- P-Channel FET: The P-Channel FET forms the main switching element of the device. When the FET is turned on, current flows through the channel, effectively turning the device on.
- Bipolar Junction Transistor (BJT): The BJT forms a closed circuit when the FET is on, allowing current to flow from the drain to the source. The BJT is necessary for proper operation of the device.
- Integrated Circuit (IC): The IC provides the device with on/off control, as well as temperature compensation. This helps to ensure that the device provides optimal performance in various conditions.
In addition to its primary switching circuit, the device also features a small group of control and monitoring ports, which provide control and monitoring capability. These include a voltage detector, a temperature sensor, and a logic input port. Together these three inputs allow users to further customize the performance of the device.
The IPM029N06NXKSA1 is a cost-effective, high-performance device that is suitable for a wide range of applications. It is a great choice for applications such as power management and audio/video equipment, as it provides superior noise immunity, low heat dissipation, and excellent power efficiency. Furthermore, the device\'s small size allows it to be easily integrated into a variety of design configurations. As a result, the IPM029N06NXKSA1 is an ideal choice for those seeking a reliable, cost-effective solution for their power management and audio/video applications.
The specific data is subject to PDF, and the above content is for reference
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