IPA086N10N3GXKSA1

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IPA086N10N3GXKSA1 Application Field and Working Principle

The IPA086N10N3GXKSA1 is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a P-Channel Enhancement Mode MOSFET, which means the gate voltage must be higher than the source voltage to turn the transistor “on” and allow the flow of electrons to the drain. Having said that, this particular MOSFET is capable of high frequency switching and power amplification, which makes it suitable for a wide variety of applications, such as in audio amplifiers, voltage regulators, power supression circuits, and motor control devices.

Standard Features

• Drain-Source Breakdown Voltage: ∼100 V
• Drain-Source On-State Resistance: ∼0.06 Ohms
• Gate-Source Breakdown Voltage: 350 mV
• Output Capacitance: 30 pF
• Continuous Drain Current: 18 amps
• Pd - Power Dissipation: 84 Watts
• Transition Frequency - fT: 110 MHz

Principles of Operation

The IPA086N10N3GXKSA1 works on a basic principle of physics called the Electric Field Effect. This is based on the interaction of electrons and holes in a semiconductor material with electric fields. The basic idea is that when a voltage is applied to one side of a semiconductor material, an electric field is created in the material. This electric field then attracts and repels electrons, thus giving rise to an electric current. The output of this current depends on the voltage applied and the doping level of the semiconductor material.

The IPA086N10N3GXKSA1 is a P-Channel Enhancement Mode MOSFET, meaning that the device must be biased with a positive voltage on the gate with respect to the source in order to turn “on” and allow the flow of electrons to the drain. Once the gate voltage reaches a threshold value, the MOSFET will then conduct, allowing current to pass through to the drain.

Applications

The IPA086N10N3GXKSA1 has a wide range of applications, including driving a variety of audio amplifiers, voltage regulators, power suppression circuits and motor control devices. It is capable of high frequency switching, making it suitable for applications in digital circuits and telecommunications.

It is well suited for a range of amplifier applications, such as push-pull amplifiers, single-ended amplifiers, audio amplifiers and high frequency amplifiers. It can also be used for a variety of power supplies, such as those used in computer systems, motor control applications and in AC/DC converters.

The IPA086N10N3GXKSA1 is also an ideal choice for use in motor control applications, as it is able to handle high voltage and current loads. It can be used to drive DC motors or AC induction motors, brushless motors and stepper motors.

This MOSFET is also well suited for use in power supply circuits, such as DC-DC converters, power switch-mode regulators, over-current and short-circuit protection circuits and voltage clamp circuits.

Conclusion

The IPA086N10N3GXKSA1 is an ideal choice for a wide variety of applications, such as audio and high frequency amplification, voltage regulation, power supplies and motor control. This is due to its capability of high frequency switching, high voltage and current handling, and low resistance drain-source on-state. It is an excellent choice for a variety of amplifier, power supply and motor control applications.

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