Allicdata Part #: | IPA032N06N3GXKSA1-ND |
Manufacturer Part#: |
IPA032N06N3GXKSA1 |
Price: | $ 2.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 84A TO220-3-31 |
More Detail: | N-Channel 60V 84A (Tc) 41W (Tc) Through Hole PG-TO... |
DataSheet: | IPA032N06N3GXKSA1 Datasheet/PDF |
Quantity: | 500 |
1 +: | $ 2.21760 |
10 +: | $ 2.00403 |
100 +: | $ 1.61041 |
500 +: | $ 1.25253 |
1000 +: | $ 1.03781 |
Vgs(th) (Max) @ Id: | 4V @ 118µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO220-3-31 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13000pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPA032N06N3GXKSA1 is a single, enhancement-mode power MOSFET with a trench gate structure. It uses high-electron mobility transistors (HEMTs) to achieve low on-state resistance and fast switching performance. This makes it suitable for a wide range of applications, such as power management and protection circuits.
The device is available in a 6-Pin DFN501 Package. It supports voltage operating from -55V to 800V and can support up to 1.55A with a low drain-source on-state resistance (RDSon). It also offers a low gate threshold voltage without the need for an enhancement layer. This makes it suitable for a variety of applications and is an attractive option for renewable energy power conditioning.
The IPA032N06N3GXKSA1 uses a trench gate structure to keep the gate charge losses low and reduce the body diode forward-voltage drop. This allows it to have a very low RDSon and a high switching frequency. The device is also highly reliable, with a guaranteed RDSOn of 0.03 Ohm at 100V.
The working principle of the IPA032N06N3GXKSA1 is based on the basic MOSFET structure. It consists of four terminals - gate, source, drain, and body. The gate is an insulated gate made of metal or polysilicon. The source and drain are terminals where the majority carriers will flow. The body is a semi-conductive material that acts as gate insulation.
When a voltage is applied to the gate, a channel will form between the source and drain terminals and the majority carriers will start flowing. This is known as the "channel formation". When the gate voltage is higher than the threshold voltage, the channel will open and allow current to pass through. When the gate voltage is reduced, the channel will be reduced, resulting in a lower drain current.
The IPA032N06N3GXKSA1 is an ideal choice for a variety of applications, such as motor control, lighting effects, and HVAC applications. It is also suitable for use in renewable energy power conditioning, providing efficient and reliable switching. The device is highly reliable, robust, and easy to use, making it an attractive option for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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