IPA040N06NXKSA1 Allicdata Electronics
Allicdata Part #:

IPA040N06NXKSA1-ND

Manufacturer Part#:

IPA040N06NXKSA1

Price: $ 1.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V TO220-3
More Detail: N-Channel 60V 69A (Tc) 36W (Tc) Through Hole PG-TO...
DataSheet: IPA040N06NXKSA1 datasheetIPA040N06NXKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 0.97272
Stock 1000Can Ship Immediately
$ 1.08
Specifications
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3375pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4 mOhm @ 69A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IPA040N06NXKSA1 is a high performance, low-loss power MOSFET with transistor static performance. It offers a wide range of intelligent and system control solutions for applications requiring enhanced power control, high-speed switching and efficient system control. The device was designed to improve system efficiency by providing an ultra-low on-resistance feature and the ability to switch at incredibly fast switching speeds. This feature makes it an ideal choice for automotive, high-reliability, and compact mobile power solutions. Additionally, IPA040N06NXKSA1 has high efficiency and low power consumption, making it a popular choice for applications that require power management solutions.

The working principle of IPA040N06NXKSA1 can be explained by studying the relation between different parameters that govern the operation of a MOSFET device. The device is built on a MOS field effect transistor (MOSFET) which has three terminals: the gate, the source, and the drain. When a gate voltage (VGS) is applied to the gate terminal, electrons from the gate potential are attracted toward the source and cause a decrease in resistance between the drain and source terminals. This decrease in resistance is referred to as channel depletion and is proportional to the gate voltage. When the gate voltage is increased, more electrons are attracted to the channel, and the channel depletion increases, resulting in a decrease in channel resistance.

The working principle of IPA040N06NXKSA1 is based on the application of a control voltage (VGS) to the gate terminal in order to increase or decrease the channel resistance between the drain and the source. This allows the MOSFET to be used in a variety of electronic applications and power management solutions. For example, in a motor controller, VGS can be used to increase the channel resistance between the drain and the source, causing the motor speed to decrease. Similarly, VGS can be used to decrease the channel resistance, which causes the motor speed to increase.

IPA040N06NXKSA1 is a versatile and highly efficient device, making it an ideal choice for many power management solutions. It is widely used in automotive, high-reliability, and compact mobile power solutions for its ultra-low on-resistance feature and ability to respond to different input voltage levels. Additionally, the device can be used in applications requiring high speed switching, such as communication signal processing, PWM motor speed, and rectification and power filtering solutions.

In summary, IPA040N06NXKSA1 is a high performance, low-loss power MOSFET with transistor static performance. It offers a wide range of intelligent and system control solutions for applications requiring enhanced power control, high-speed switching and efficient system control. The device was designed to improve system efficiency by providing an ultra-low on-resistance feature and the ability to switch at incredibly fast switching speeds. Additionally, the device can be used in applications requiring high speed switching, such as communication signal processing, PWM motor speed, and rectification and power filtering solutions.

The specific data is subject to PDF, and the above content is for reference

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