IPA045N10N3GXKSA1

The IPP045N10N3GXKSA1 is an N-channel enhancement mode power MOSFET engineered for use in DC-DC converters and high-speed switching applications. It is a high voltage, high performance device with very good RDS(ON) to allow it to provide excellent load regulation and fast switching times in a wide range of applications that require a rugged component to meet safety and EMI/RFI radiation requirements.

The IPP045N10N3GXKSA1 is designed for use in high power switches, AC adapters, consumer and commercial grade DC-DC converters, and switching sawtooth power supplies. It is made from a silicon material and utilizes an advanced, patented manufacturing process called “planar technology”. This allows for very high performance switching characteristics and the low on-resistance of the device.

The IPP045N10N3GXKSA1 is a three terminal device with two gate inputs, one drain and one source. It has two terminals, the Gate and the Drain, and the third terminal, the Source, is not connected and is left as floating. The Gate is the control input and it is used to control the conduction of the device by varying the voltage on the Gate relative to the voltage on the Drain. The device is capable of switching high currents and it can be used to replace more expensive and complex (polarized) VDSLs.

The working principle of the IPP045N10N3GXKSA1 is based on the depletion layer effect which is generated when a voltage is applied to the gate and the drain leads. As this voltage is increased, the depletion layer narrows, causing the device to act as an insulator and preventing current from flowing through it. As the voltage is further increased, the depletion layer widens and the device conducts again, allowing current to flow through it. The gate voltage must be increased enough to overcome the voltage threshold of the device, after which it can be modulated to control current flow and switching times.

The IPP045N10N3GXKSA1 is a very versatile and reliable power MOSFET designed for demanding applications requiring high switching speeds, low on-resistance and excellent load regulation. It is ideal for use in high-power switching, AC adapters, DC-DC converters and switching sawtooth power supplies. As with any power MOSFET, care must be taken when connecting and operating the device, as it is sensitive to heat, current, and ESD.