Allicdata Part #: | IPA093N06N3GXKSA1-ND |
Manufacturer Part#: |
IPA093N06N3GXKSA1 |
Price: | $ 0.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 43A TO220-3-31 |
More Detail: | N-Channel 60V 43A (Tc) 33W (Tc) Through Hole PG-TO... |
DataSheet: | IPA093N06N3GXKSA1 Datasheet/PDF |
Quantity: | 294 |
1 +: | $ 0.80640 |
50 +: | $ 0.64411 |
100 +: | $ 0.56360 |
500 +: | $ 0.43706 |
1000 +: | $ 0.34505 |
Vgs(th) (Max) @ Id: | 4V @ 34µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO220-3-31 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FETs (Field Effect Transistors) are an essential building block of today\'s electronics, enabling devices to efficiently and accurately switch and amplify other signals. MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are a type of FET that uses an electrical field to gate their current flow. While not as popular as BJTs, FETs remain a versatile and popular choice for many design considerations.
The IPA093N06N3GXKSA1 is a single MOSFET transistor. This type of transistor has a unique combination of capabilities, such as low-on resistance, low gate charge, and low input capacitance. It is these features that make the IPA093N06N3GXKSA1 an ideal choice for many applications.
In terms of its application field, the IPA093N06N3GXKSA1 is suitable for applications such as DC motor drive, switching, voltage regulation, and high-frequency circuits. It can be used in a wide range of circuit designs, from basic electronic components, to integrated circuits. It is also compatible with surface mount and through-hole technology, making it suitable for a wide range of devices and applications.
In terms of its working principle, the IPA093N06N3GXKSA1 utilizes a three terminal structure, with a gate, drain, and source. The gate controls the current flow between the source and drain by using an electric field. When the voltage at the gate is low, current does not flow through the device and it is in the "off" state. When the voltage at the gate is increased, current can flow from source to drain, thus turning the device "on."
The IPA093N06N3GXKSA1 also features a low input capacitance, which helps reduce power consumption in the circuit. In addition, it has a low gate charge, which allows the circuit to respond quickly and accurately. The device is also able to handle higher voltages and currents, making it suitable for a wide range of circuits.
The IPA093N06N3GXKSA1 is also distinguished by its low on-resistance, which ensures a low power dissipation and temperature rise. This, in turn, allows the device to operate at high switching speeds with minimal power consumption. Finally, the low input capacitance helps to reduce the cost of the overall circuit, as it requires fewer supporting components.
In conclusion, the IPA093N06N3GXKSA1 is a versatile single MOSFET transistor with a unique combination of capabilities that make it suitable for a wide range of applications. It is able to switch and amplify signals with low power consumption, low gate charge, and high speed. It also features a low input capacitance, helping to reduce the cost of the overall circuit. It is compatible with both surface mount and through-hole technology, making it suitable for a wide range of devices and applications.
The specific data is subject to PDF, and the above content is for reference
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