Allicdata Part #: | IPA041N04NGXKSA1-ND |
Manufacturer Part#: |
IPA041N04NGXKSA1 |
Price: | $ 0.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V TO220-3 |
More Detail: | N-Channel 40V 70A (Tc) 35W (Tc) Through Hole PG-TO... |
DataSheet: | IPA041N04NGXKSA1 Datasheet/PDF |
Quantity: | 474 |
1 +: | $ 0.83790 |
10 +: | $ 0.74403 |
100 +: | $ 0.58804 |
500 +: | $ 0.45606 |
1000 +: | $ 0.36004 |
Vgs(th) (Max) @ Id: | 4V @ 45µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO220-FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 70A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPA041N04NGXKSA1 is a type of transistor, specifically classified as a field effect transistor (FET) and a metal oxide semiconductor field effect transistor (MOSFET). It is a single power FET device capable of providing gated control of voltage and current. As such, the IPA041N04NGXKSA1 has been designed to be an efficient choice for power switching in a range of applications.
Power FETs can be found in many applications, such as: AC-DC converters, DC-DC converters, EMI filters, motor drivers, DC-AC and AC-AC Inverters, high power DC loads, and power supply control circuits. As a power switching device, the IPA041N04NGXKSA1 can be used in applications that require the control of large amounts of current, such as motor control, voltage regulation, and even high frequency light dimmers.
The IPA041N04NGXKSA1 is constructed from a 30V N-channel MOSFET. It is an advanced Power MOSFET, as it is capable of dealing with high current levels, a low on-resistance, and fast switching. The device is based on a buck register design, which enables it to offer precise level shifting when alternative solutions are not available.
The working principle of the IPA041N04NGXKSA1 is that the N-channel MOSFET is a three-terminal device, with two connections to the source material, and one connection to the drain material. By adjusting the voltage applied to the gate, the amount of current flowing through the channel can be varied. This regulated current flow enables the precise control of current, which is necessary for efficient power switching.
Unlike other FETs, the IPA041N04NGXKSA1 uses the advanced buck register design to ensure accuracy in the level shifting. This ensures that any potential ripple or crosstalk is reduced, making it more stable in switching, while also maintaining its desired current limit and operational output voltage.
The IPA041N04NGXKSA1 also features a low on-resistance, meaning that it can be used to efficiently control voltages in a wide range of applications. Its high current ratings also make it suitable for motor control or other applications where high power switching is present, allowing for a steady supply of power without the need for additional switching components.
Overall, the IPA041N04NGXKSA1 is an efficient power switching device, which can be used in a wide range of applications. Its buck register design and low on-resistance make it a reliable power solution for a variety of tasks. It is a great choice for any application that requires precise control of voltage and current.
The specific data is subject to PDF, and the above content is for reference
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