IPA075N15N3GXKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPQ075N15N3GXKSA1 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for power switching applications. It is a single device, meaning it is composed of just one MOSFET chip. It offers high performance in a wide range of applications, including power conversion, DC-DC power conditioners, programmable logic controllers, and switching regulators. In addition, it offers superior insulation and high-speed switching capabilities compared to other types of transistors.

The MOSFET technology offers some advantages over other types of transistors. For example, it is capable of operating at significantly higher voltages than bipolar transistors. The higher the voltage, the higher the current rating it can support. This makes it ideal for power applications like switching regulators and DC-DC converters. Additionally, the MOSFET has fast switching speeds, which allow it to respond quickly to changes in the circuit. Lastly, the MOSFET has low on-state resistance, meaning it will draw less current than other transistors when it is conducting. This reduces the power loss in the circuit.

The IPQ075N15N3GXKSA1 is designed for high voltage applications up to 900V, making it ideal for use in high power applications. It has a maximum current rating of 54A, the highest available in its class, making it suitable for very high power switching. It also has a breakdown voltage of 1200V, making it suitable for applications requiring high voltage isolation. It is also designed to have low gate threshold voltage (VTH), making it easy to control with lower voltages.

The primary application for the IPQ075N15N3GXKSA1 is for power switching applications. As an example, its exceptional power handling capabilities make it an ideal choice for applications such as motor control, HVAC systems, and home appliance control. In addition, its low gate threshold voltage makes it an ideal choice for the control of digital circuits, such as those found in microcontroller applications. It can also be used in low side switching applications, allowing for the control of standalone logic circuits.

The working principle of the IPQ075N15N3GXKSA1 is based on the MOSFET effect, which describes how the current flows through a MOSFET. The MOSFET is composed of two types of terminals: the gate and the source. The gate terminal is used to control the flow of current through the MOSFET, while the source provides the necessary power. When a voltage is applied to the gate terminal, the MOSFET will allow current to flow between the source and the drain. The amount of current that can flow is determined by the voltage applied.

The IPQ075N15N3GXKSA1 MOSFET is an ideal choice for power switching applications due to its high voltage and current handling capabilities, fast switching speeds, and low on-state resistance. Its low gate threshold voltage makes it easy to control with low voltage signals, making it suitable for both switching and logic control applications.

The specific data is subject to PDF, and the above content is for reference