| Allicdata Part #: | IPA083N10N5XKSA1-ND |
| Manufacturer Part#: |
IPA083N10N5XKSA1 |
| Price: | $ 1.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 45A TO220-3 |
| More Detail: | N-Channel 100V 44A (Tc) 36W (Tc) Through Hole PG-T... |
| DataSheet: |  IPA083N10N5XKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.38600 |
| 10 +: | $ 1.25055 |
| 100 +: | $ 1.00479 |
| 500 +: | $ 0.78152 |
| 1000 +: | $ 0.64755 |
Specifications
| Vgs(th) (Max) @ Id: | 3.8V @ 49µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | PG-TO220-FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 36W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2730pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.3 mOhm @ 44A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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IPA083N10N5XKSA1 are enhanced voltage ratings to 600V MOSFETs. These transistor devices are classified as single transistors/FETs (Field-Effect Transistors)/MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors). In this article, we will explore the application fields and working principles of IPA083N10N5XKSA1.
Application Field
IPA083N10N5XKSA1 are suitable for applications such as AC and DC inverters, motor controls, power circuit diagnosis and power supplies, which require high-frequency switching and ultra-high accuracy. As this device offers extremely soft, highly rugged, and low on-resistance characteristics, it is suitable for use with such devices as IGBTs (Insulated Gate Bipolar Transistors) or for high-power, low-on-resistance applications.Working Principle
A MOSFET is a type of transistor, which uses a combination of electric fields and metal-oxide semiconductor layers to control the flow of current. MOSFETs are extremely efficient, and they can achieve a high-power output while operating at a low voltage. As a result, they are most commonly used in applications that require high-power and low-voltage operations.The working principle of the IPA083N10N5XKSA1 is based on its structure. The device is made up of a certain number of transistors, which are connected in series. As such, the operation of the device is based on the combination of electric fields and metal-oxide semiconductor layers.When the device is switched on, the channels between the source and the drain open up, allowing electric current to flow. At the same time, the metal-oxide layers are used to control the current flow. Depending on the applied voltage, the metal-oxide layers can be adjusted to control the current flow, thus enabling the device to achieve a high-power output.It is worth noting that the IPA083N10N5XKSA1 devices are also known for their high-frequency switching capabilities. As such, the devices can be used for applications that require extreme accuracy and fast switching times.Conclusion
In conclusion, IPA083N10N5XKSA1 are enhanced voltage ratings to 600V MOSFETs. These transistor devices are suitable for applications such as AC and DC inverters, motor controls, power circuit diagnosis and power supplies, which require high-frequency switching and ultra-high accuracy. The working principle of the IPA083N10N5XKSA1 is based on its structure, which is made up of a certain number of transistors, which are connected in series. The device is also known for its high-frequency switching capabilities, which enable it to achieve a high-power output while operating at a low voltage.The specific data is subject to PDF, and the above content is for reference
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