| Allicdata Part #: | IPB10N03LB-ND |
| Manufacturer Part#: |
IPB10N03LB |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 50A D2PAK |
| More Detail: | N-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-T... |
| DataSheet: | IPB10N03LB Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 20µA |
| Package / Case: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Supplier Device Package: | PG-TO263-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 58W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1639pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 9.6 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IPB10N03LB is an advanced field-effect transistor n-channel enhancement-type MOSFET. It is designed for a wide range of commercial and industrial applications that require high power and good thermal performance. This device is the perfect choice for use in audio, DC-DC converters, motor control, and switching power supplies.
The advantages of the IPB10N03LB include a low on-resistance and high maximum drain current. It has an integrated gate protection diode, which helps to protect the gate and body from electrostatic shock. The chip also has an integrated logic-level control and an integrated power saving feature.
The IPB10N03LB is a single transistor, which means it only has one terminal for the gate, source, and drain. All of the other terminal pins are internal to the transistor and don\'t need to be connected. The gate is the control node for the transistor, and when it is high, the device is in the on-state and allows current to flow. When the gate is low, the device is in the off-state and no current can flow.
The source and drain are the two main terminals of the device and they are connected to the power supply. The drain is usually connected to the positive terminal, while the source is connected to the negative terminal. The way the device works is that, when the gate input is high, the drain and source are connected together, allowing current to flow through the device. When the gate input is low, the drain and source are no longer connected and no current can flow.
The IPB10N03LB is able to handle high power loads, and can handle up to 10A at 25V, with a maximum drain voltage of 100V. It has a small on-resistance and a low power consumption. The output of the device is also very fast and reliable.
The IPB10N03LB is able to withstand a wide temperature range(-55°C ~ 175°C). It also has excellent thermal performance, meaning that it can maintain its output and switching characteristics for a long period of time even when subjected to high temperatures and long exposure to the elements.
The IPB10N03LB is a versatile and reliable component, and can be used for many applications that require high power and good thermal performance. It is the perfect choice for use in audio, DC-DC converters, motor control, and switching power supplies.
The specific data is subject to PDF, and the above content is for reference
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IPB10N03LB Datasheet/PDF