Allicdata Part #: | IPB12CNE8NG-ND |
Manufacturer Part#: |
IPB12CNE8N G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 85V 67A TO263-3 |
More Detail: | N-Channel 85V 67A (Tc) 125W (Tc) Surface Mount D²P... |
DataSheet: | IPB12CNE8N G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 83µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4340pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 12.9 mOhm @ 67A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drain to Source Voltage (Vdss): | 85V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IPB12CNE8N G transistor is a field-effect transistor (FET) that utilizes a single, metal-oxide-semiconductor field-effect transistor (MOSFET) to control electric current and amplification. This technology allows for high efficiency, accuracy, and reliability that makes it ideal for a variety of electronic applications, ranging from industrial automation to the medical field. Here we will outline the application field and working principles of the IPB12CNE8N G transistor.
The IPB12CNE8N G transistor is most typically used in switch mode power supplies (SMPS). It is ideal for power-switching applications, given that it provides near-instantaneous switching and offers high levels of efficiency. Some other common applications that take advantage of the IPB12CNE8N G include LED drivers, motor control systems and industrial process monitoring.
When it comes to the inner workings of the IPB12CNE8N G transistor, it utilizes source and drain contacts that are connected to a gate. When the gate voltage is high, current is allowed to flow through the gate, allowing the transistor to become active. Conversely, when the voltage is low, the current will be blocked and the transistor is off. This allows for precise control, as the voltage is adjustable and can be changed remotely via a signal. The IPB12CNE8N G works on low frequency inputs, meaning it is suitable for both AC and DC applications.
The IPB12CNE8N G offers remarkable performance, with a drain-source breakdown voltage of 200V, ensuring high levels of reliability when large voltages are applied. It also offers excellent surge protection, making it ideal for use in applications that need to be able to withstand rapid power changes. Furthermore, it can handle high temperatures, ranging from -55 to 175°C. This makes it suitable for both commercial and industrial applications, as it can handle conditions that are more extreme than average.
The IPB12CNE8N G is a great option for any application that requires high levels of efficiency and control. Its low switching times and reliable performance make it an excellent choice. At the same time, its ability to withstand high temperatures and surges make it the ideal choice for industrial applications. Thanks to its versatile design, it is an essential component for a variety of electronic devices.
The specific data is subject to PDF, and the above content is for reference
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