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IPB160N04S4H1ATMA1 application field and working principle

The IPB160N04S4H1ATMA1 is a dual n-channel advanced Power MOSFET designed for applications requiring higher drain-source breakdown voltage, fast switching speed and low on-resistance. It is based on a high-voltage process, having accurate temperature parameters, improved avalanche capabilities and stable operation at high temperature.

Application Fields

• Power management in automotive, industrial and consumer electronics.
• High-current, high-voltage power supply.
• Switching power supplies.
• Computers and networking.
• LED lighting.

Working Principle

The IPB160N04S4H1ATMA1 is a type of MOSFET, or metal-oxide-semiconductor field-effect transistor, that uses a voltage applied to the gate to control the current flow through the channel between the source and the drain. The gate voltage will create an electric field that attracts electrons from the semiconductor region near the source, then through the channel where it will reach the drain. In this way, the MOSFET can be used as an electronically controlled switch. The IPB160N04S4H1ATMA1 offers higher breakdown voltage and lower on-resistance when compared to other MOSFETs, allowing it to be used in applications that require higher current.

Benefits

• Low on-resistance
• Logic level gate-drive compatible
• Low tail current
• Improved avalanche characteristics
• Robust gate oxide

The IPB160N04S4H1ATMA1 offers improved operation in a wide range of temperature and breakdown voltage, making it a suitable choice for power management applications requiring fast switching speed and high current. Additionally, the improved gate-drive characteristics and low tail current of the device ensures better reliability and performance.

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