IPB13N03LB G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPB13N03LB G is a single logic-level N-channel MOSFET (Metal Oxyde Semiconductor Field Effect Transistor), which is specifically designed to be used for low voltage and low current applications. It is able to switch in the ”ON” state at only 3.3 Volts. This makes it very useful in applications where lower voltage levels are needed. The device features an advanced MOS process optimized for low voltage power MOSFETs. It is constructed with a vertical double diffused mesa which provides superior switching characteristics and ESD protection.

The application field of the IPB13N03LB G MOSFET is quite varied. It is especially useful for low voltage power MOSFETs applications such as DC to DC conversion, motor control, gate driving, and battery protection. It is also suitable for switching applications in the consumer, industrial and automotive market.

The working principle of the IPB13N03LB G MOSFET is based on the principles of semiconductor physics. The device consists of two types of transistors: a P-type MOSFET and an N-type MOSFET. The P-type MOSFET is responsible for the flow of current, while the N-type MOSFET is responsible for the control of voltage. The device is also equipped with special protection devices that protect it from electrostatic discharge (ESD).

When the output voltage is low, the P-type MOSFET is turned on, which allows current to flow through it. The N-type MOSFET is then turned off, preventing the current from flowing through it. When the output voltage is high, the N-type MOSFET is turned on, allowing current to flow through it.

The IPB13N03LB G MOSFET also contains an internal gate resistance, which allows for more precise voltage control. This helps to reduce losses due to overvoltage, as well as preventing the device from being damaged. It also helps to reduce the power consumption of the device.

In conclusion, the IPB13N03LB G MOSFET is a versatile device that can be used in a variety of applications. It is designed to provide high current and low voltage performance, enabling it to be used in a variety of applications. Its internal gate resistance allows for better control of the output voltage, which helps to reduce losses, while its ESD protection helps to reduce the chances of device damage.

The specific data is subject to PDF, and the above content is for reference