IPB180N10S402ATMA1 Discrete Semiconductor Products

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The IPB180N10S402ATMA1 is a type of power Field-Effect Transistor (FET). It is also referred to as an n-channel MOSFET (metal-oxide-semiconductor field-effect transistor). This type of transistor is commonly used in many applications and is a single-package transistor.

This FET is a semiconductor device made up of multiple components including a gate, source and drain. It is used for switching, amplifying and voltage controlling. As a power transistor, it can handle large currents and voltages. The IPB180N10S402ATMA1 is a 30V drain-source breakdown voltage, with a 0.056 Ohm maximum on-state resistance. It is rated for up to 18 Amp continuous drain currents.

The IPB180N10S402ATMA1 transistor is used in many different applications. It is commonly used in motor control, power supplies, motor inverters, audio amplifiers, home appliances and industrial control systems. Additionally, it is also used for lighting control, switching high-power loads, and power converters.

The working principle of the IPB180N10S402ATMA1 is based on the concept of a field-effect transistor. This transistor has two terminals: the gate and the source. The gate is charged with a voltage, which results in an electric field being generated around the gate. This electric field can attract or repel electrons from the source. If electrons are attracted to the gate, they are generated in the source and create an inversion layer in the channel. This creates an electrically conductive path between the source and drain, thus a switch is formed.

The IPB180N10S402ATMA1 is a single-package transistor and requires a certain amount of voltage to switch. When this voltage decreases, the electrical current also decreases and the switch will go to its off position. This differs from a bipolar transistor, which requires a current-controlled base to work.

The IPB180N10S402ATMA1 is a powerful and versitile FET with a wide range of applications. It is commonly used for motor control, power supplies, motor inverters, audio amplifiers, home appliances, industrial control systems and lighting control. The working principle of the IPB180N10S402ATMA1 is based on the concept of a field-effect transistor, where a gate is charged with a voltage and an electric field is created around the gate, which can attract or repel electrons from the source and create a switch.

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