IPB120N04S402ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB120N04S402ATMA1 is a laterally diffused metal oxide semiconductor (LDMOS) transistor. LDMOS transistors are commonly found in various applications like switches, amplifiers, and receivers. The advantages of using LDMOS transistors are low power consumption, high output power, and low noise.

IPB120N04S402ATMA1 is designed for applications requiring high power, high efficiency, and high gain, such as broadcast radio transmitters, remote radio transceivers, point-to-point microwave radio links, and other industrial and military applications. Because of its high efficiency and low noise floor, the transistor is well suited for medium to high-power applications in the frequency range of 400MHz to 2.6GHz in pulsed and continuous wave (CW) operations.

IPB120N04S402ATMA1 is a N-type MOSFET (metal-oxide-semiconductor field-effect transistor) also known as a “single-finger” transistor. This type of transistor employs an insulated-gate structure which comprises a single metal electrode that is sandwiched between the source and drain electrodes. This metal layer forms the gate and, when a voltage is applied to it, modulates the conductance between the source and drain.

The IPB120N04S402ATMA1 operates according to the enhancement-mode principle. This means that the transistor can be either turned on or off by applying positive or negative voltages at the gate. When the gate voltage is positive relative to the source voltage, the transistor “opens” and current begins to flow between the source and drain. When the gate voltage is negative relative to the source, the transistor “closes” and no current can flow.

IPB120N04S402ATMA1 has very high power and gain characteristics for a single-finger device; it can provide an output power of up to 480W in CW operation. Its noise figure is also very low, as low as 0.6dB, which makes it well suited for microwave and high-power applications. The transistor is rated for drain-source voltage of 40V, drain current of 120A, and gate-source voltage of 7V.

IPB120N04S402ATMA1 is a laterally diffused metal oxide semiconductor (LDMOS) transistor designed for high power and high efficiency. Its single-finger structure modulates the conductance between the source and drain with a gate voltage, and it can achieve an output power of up to 480W in CW operation. The transistor is well suited for applications requiring high power, high efficiency, low noise, and low power consumption, such as broadcast radio transmitters, remote radio transceivers, point-to-point microwave radio links, and other industrial and military applications.

The specific data is subject to PDF, and the above content is for reference