| Allicdata Part #: | IPB120N08S404ATMA1-ND |
| Manufacturer Part#: |
IPB120N08S404ATMA1 |
| Price: | $ 1.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH TO263-3 |
| More Detail: | N-Channel 80V 120A (Tc) 179W (Tc) Surface Mount D²... |
| DataSheet: | IPB120N08S404ATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.98792 |
| Vgs(th) (Max) @ Id: | 4V @ 120µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 179W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6450pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The IPB120N08S404ATMA1 is a native N-Channel enhancement mode MOSFET Transistor. It is one of the most commonly used types of transistor in today\'s electronics industry.
This transistor is ideal for use in various applications and circuits such as motor control, power switching, analog switch, and voltage regulator. But, its main application field is in Digital Logic Gates due to its fast switching speed and low drive current.
The IPB120N08S404ATMA1 offers an operating voltage range of –3V to 36V, which makes it suitable for many low-voltage pooling applications. Its low threshold voltage (Vth) of 2.25V makes it suitable for switching applications.
The transistor has a maximum drain source voltage of 40V, drain-source on-state resistance of 0.0078 ohm and drain current of 120A. The device has a standard TO-220 packaging.
It is a silicon-based transistor, which has a higher efficiency compared to other types of transistors due to its thinner oxide layers. The silicon oxide layers allow for higher transconductance and faster switching, which corresponds to improved power efficiency.
In terms of its working principle, the IPB120N08S404ATMA1 is driven by an external voltage applied between the drain and the gate. When voltage is applied to the gate, it changes the potential between the source and the drain. This causes the region between the two electrodes to become conductive and allows for current to flow.
The transistor can be used in a variety of configurations. It can be used in either the common-source or common-drain configuration, depending on the number of sources and drains available. In the common-source configuration, the source is connected to the ground and the drain is driven by an external signal. In this configuration, the transistor acts as an amplifier. In the common-drain configuration, the source is driven by an external signal and the drain is connected to the ground. In this configuration, the transistor acts as an attenuator.
The IPB120N08S404ATMA1 can also be used in the common-gate configuration, where the source and drain are connected to the same voltage sources. In this configuration, the transistor acts as a switch.
Overall, the IPB120N08S404ATMA1 is a highly useful transistor for a variety of applications. It has a fast switching speed and low drive current, making it ideal for digital logic gates. Its high efficiency makes it suitable for power switching and other low-voltage applications. Finally, its multiple configurations make it useful for both amplification and attenuation purposes.
The specific data is subject to PDF, and the above content is for reference
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IPB120N08S404ATMA1 Datasheet/PDF