IPB120N04S401ATMA1 Discrete Semiconductor Products

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The IPB120N04S401ATMA1 is a PowerTrench MOSFET manufactured by International Rectifier. It belongs to the family of single MOSFETs, transistors related to Field Effect Transistors (FETs) that work as current-controlled switches.

Its principal characteristics are as follows:

• RDS(on): 3.2mΩ
• Current: 120A
• Voltage: 40V
• Power: 2.64kW
• Package: TO-220

The IPB120N04S401ATMA1 is used in a variety of applications such as PC servers, industrial equipment and consumer electronics. It is also used in high current switching applications that are required to handle high voltage and power levels. Due to its high power performance, this device is suitable for high efficiency, lower power consumption, and high output power.

The IPB120N04S401ATMA1 device is based on the MOSFET operating principle. It is a voltage-driven device, in which the current flow is controlled by the voltage applied to the gate-source of the device. It consists of three terminals: The gate, the source, and the drain. The gate of this device creates an internal electric field using a small current, causing the channel to open from the source to the drain, allowing the flow of current.

This opened channel has a very low resistance. The voltage applied to the gate is what determines the resistance of this channel, which is measured by the on-state resistance. The higher the applied voltage, the lower the resistance. If a high voltage signal is applied to the gate, this creates a large electric field, which allows the channel to be opened quickly, resulting in high current flow at a low voltage. It also results in low voltage drop, leading to higher device efficiency.

In addition to its operating principle, the IPB120N04S401ATMA1 also has various advantages. It has low gate capacitance, fast switching speed, and ESD protection. Moreover, it is designed with a low-thermal resistance package that dissipates heat more efficiently, allowing for higher current flow.

In conclusion, the IPB120N04S401ATMA1 is a single MOSFET device manufactured by International Rectifier. It is mainly used in high-current switching applications and features a low resistance value, fast switching speed, low gate capacitance, low-thermal impedance package, and ESD protection. Its operating principle is based on applying a voltage to the gate, which creates an electric field to open the flow of current through the device.

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