IPB14N03LA G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FETs and MOSFETs are important components in modern electronic systems. The IPB14N03LA G is a single FET that is designed for operation at frequencies up to 1 GHz. This device is part of the family of N-channel MOSFETs that can be used for high voltage switching, amplification, and many other purposes. In this article we will explore the IPB14N03LA G application field and working principle.

The IPB14N03LA G is designed for use in high-speed, high-frequency applications such as switching regulators, load switches, driver circuits, low-noise amplifiers, and high-speed analog to digital converters. It has a low on-resistance of 2.2 ohms and a maximum power dissipation of 2.5 Watts. It has a maximum supply voltage of 20 Volts and can operate at frequencies up to 1 GHz. Additionally, it has an absolute maximum drain-source voltage of 22 Volts.

The working principle of the IPB14N03LA G is based on the MOSFET concept. The device consists of four terminals which are the drain, the source, the gate, and the substrate. When a voltage is applied to the gate terminal, it causes an electric field to be formed around the MOSFET. This electric field causes an accumulation of electrons between the drain and source, which in turn causes current to flow from the drain to the source. The current is controlled by the voltage applied to the gate terminal.

The IPB14N03LA G has an avalanche energy rating of 80mJ and an on-resistance of 2.2 ohms. Its drain-source breakdown voltage is 20 Volts and its self-resonant frequency is 200 MHz. The device has a thermal resistance of 10°C/W and a capacitance of 8pF. This makes it ideal for switching applications that require a low on-resistance and a high power dissipation.

The IPB14N03LA G is an ideal component for high-speed, high-frequency applications such as switching regulators, load switches, driver circuits, low-noise amplifiers, and high-speed analog to digital converters. It has a low on-resistance and a high drain-source breakdown voltage which makes it ideal for high power applications. Additionally, the device has a high thermal resistance, a low self-resonant frequency and a low gate-source capacitance. This makes the device well-suited for high-frequency switching applications.

In conclusion, the IPB14N03LA G is an N-channel single FET that is designed for high frequency applications. It features a low on-resistance and a high drain-source breakdown voltage which makes it ideal for high power applications. Additionally, the device has a high thermal resistance and a low self-resonant frequency which makes it ideal for high-frequency applications. This makes the IPB14N03LA G an ideal choice for a variety of high-performance applications.

The specific data is subject to PDF, and the above content is for reference