IPB136N08N3 G

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The IPB136N08N3-G is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) which is widely used in a variety of different applications, such as motor control and power supply management. The N-channel MOSFET is considered to be one of the most efficient transistors in its class, and, with its low power loss during operations, this makes it a popular choice amongst electronics enthusiasts.

The IPB136N08N3-G MOSFET is built using Infineon’s advanced PowerMESH technology, which ensures power-loss reduction and enhanced reliability. This low on-resistance MOSFET has an extremely low gate charge and a low threshold voltage, making it ideal for high-frequency switching applications. It also comes with a high breakdown voltage of 1200V, meaning it can be used in applications where high voltage power supplies are needed.

The IPB136N08N3-G has a number of features which make it a great choice for applications where efficiency is important. It has a huge current handling capability of 66A, making it suitable for high-power systems. It also has an integrated body diode, which helps to increase switching speeds, as well as reduce power dissipation.

The MOSFET also has an impressive operating temperature range of -55°C to 175°C. This is great for applications operating in harsher environmental conditions. It has a low power loss and can handle large heat-beds, making it perfect for motor and power supply control applications.

The working principle of an N-channel MOSFET is based on two properties, namely the input-output isolation and the gate voltage. When a voltage is applied to the gate, it produces a strong electric field on the oxide-semiconductor interface. This field induces a charge on the oxide-semiconductor interface, which adjusts the conductivity of the channel.

When the channel is turned ‘on’, current begins to flow between the drain and source terminals. The channel’s resistance reduces as the voltage increases, increasing the current flow. When the voltage is reduced, the channel becomes ‘off’, and the current flow is cut off. This is the basic working principle of an N-channel MOSFET.

The IPB136N08N3-G is a great choice for a wide range of applications, thanks to its low power loss, high current handling capability, and integrated body diode. Along with its impressive operating temperature range, It is ideal for use in high-power systems, such as motor and power supply control. With its advanced MESH technology, this N-channel MOSFET is extremely reliable, and is a great choice for the most demanding of applications.

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