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The IPB14N03LAT is a logic level N-channel enhancement mode power field effect transistor (FET) that provides excellent performance in a small surface mount package. The device has an on-resistance per channel of 14 mΩ and can be used both as a load switch for DC and pulsed signals, and for medium current switching in various applications such as LED lighting, battery protection, and level shifting.

Features

• Logic level gate
• Integrated protection diode
• Low RDS(on) per channel
• High current handling capability
• Optional exposed pad (EP) package

Applications

• Battery protection
• LED lighting
• General switching
• Level shifting

Working Principle

The IPB14N03LAT FET is a three terminal device consisting of a source (S), drain (D) and gate (G) terminal. The gate terminal is connected to the input signal which controls the device’s operation. When the gate terminal is at a lower voltage than the source, the FET is in its OFF state and current does not flow between the source and drain. As the gate voltage is increased to the source voltage the FET turns on and the on-resistance between source and drain is lowered and the device will allow current to flow. The maximum current that can be controlled by the FET is dependent on the gate-to-source voltage and the RDS(on).

The integrated protection diode across the FET minimizes voltage drops across the FET and reduces noise generated when switching and protecting against reverse polarity. The low RDS(on), and high current handling capability enables efficient and reliable switching operations.

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