| Allicdata Part #: | IPI80N04S403AKSA1-ND |
| Manufacturer Part#: |
IPI80N04S403AKSA1 |
| Price: | $ 1.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 80A TO262-3-1 |
| More Detail: | N-Channel 40V 80A (Tc) 94W (Tc) Through Hole PG-TO... |
| DataSheet: | IPI80N04S403AKSA1 Datasheet/PDF |
| Quantity: | 499 |
| 1 +: | $ 1.15920 |
| 10 +: | $ 1.02879 |
| 100 +: | $ 0.81333 |
| 500 +: | $ 0.63073 |
| 1000 +: | $ 0.49795 |
| Vgs(th) (Max) @ Id: | 4V @ 53µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | PG-TO262-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 94W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5260pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IPI80N04S403AKSA1 is a single FET transistor which is suitable for a variety of applications. It is a 50V N-channel MOSFET, featuring an extremely low RDS(on) of 3.7 mΩ which is ideal for power systems and medium to high current applications. This unit provides an enhanced system efficiency and substantial savings in board space by reducing the number of MOSFETs required.
Formally referred to as a field-effect transistor, the FET transistor controls the flow of electric current by modulating the electrical field generated by its gate electrode. The FET transistor acts as a kind of electronic switch which can be used to control the flow of electric current from one point to another in a circuit. The characteristics of this semiconductor device are determined by the polarity of the electric field which is applied across its terminals.
IPI80N04S403AKSA1 is an N-channel MOSFETs, which means it will allow current to flow in one direction only. It uses its gate voltage to control the current flow from source-to-drain and can be used in a variety of applications. Common applications for the IPI80N04S403AKSA1 include power supply circuits, power management systems, small switch-mode power supplies, switching regulators, and motor control.
The operation of the IPI80N04S403AKSA1 is based on the principle of majority carriers, which can be represented by either electrons or holes. When a voltage is applied to the gate terminal, it generates an electric field which creates an electrostatic attraction between the majority carriers in the MOSFET channel and the gate electrode. This results in a depletion of carriers in the channel and an increase in the resistance to current flow. As the gate voltage is increased, the depletion region of the channel will expand and the resistance to current flow will increase.
The IPI80N04S403AKSA1 is constructed with a single Field-Effect Transistor (FET) which is served as a single unit. It has three terminals, namely the drain, source and gate. The IPI80N04S403AKSA1 is designed for use in medium to high current applications due to its low RDS(on) and can be used in low power as well. It is also extremely reliable and easy to use with its wide range of options for controlling the current flow.
The IPI80N04S403AKSA1 is an ideal choice for a variety of applications. It is especially suited for power systems due to its low RDS(on), high current capability and low power requirements. This unit can also be used in switching regulators and motor control applications. It is also a reliable, easy to use and efficient solution for power management systems.
To conclude, the IPI80N04S403AKSA1 is a single FET transistor that is suitable for a variety of applications, including power management systems, small switch-mode power supplies, switching regulators and motor control. Its low RDS(on) and high current capability make it an ideal choice for medium to high current applications, and its reliability and efficiency make it a great solution for power management systems. The IPI80N04S403AKSA1 allows for efficient and easy control of the current flow, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IPI80N03S4L03AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A TO262... |
| IPI80P03P405AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
| IPI80N06S3-07 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-26... |
| IPI80N04S3H4AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO262... |
| IPI80N06S2L11AKSA2 | Infineon Tec... | 0.74 $ | 1000 | MOSFET N-CH 55V 80A TO262... |
| IPI80N06S405AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO262... |
| IPI80P04P405AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
| IPI80N06S3L-08 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-26... |
| IPI80P03P4L07AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 80A TO262... |
| IPI80N04S403AKSA1 | Infineon Tec... | 1.27 $ | 499 | MOSFET N-CH 40V 80A TO262... |
| IPI80N04S404AKSA1 | Infineon Tec... | 0.6 $ | 1000 | MOSFET N-CH 40V 80A TO262... |
| IPI80N04S204AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO262... |
| IPI80N04S2H4AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO262... |
| IPI80N06S405AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CHANNEL_55/60V |
| IPI80N06S4L07AKSA2 | Infineon Tec... | 0.83 $ | 1000 | MOSFET N-CH 60V 80A TO262... |
| IPI80P04P407AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
| IPI80N06S3L-05 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-26... |
| IPI80N03S4L04AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A TO262... |
| IPI80N06S407AKSA2 | Infineon Tec... | 0.87 $ | 1000 | MOSFET N-CH 60V 80A TO262... |
| IPI80N06S208AKSA2 | Infineon Tec... | 0.98 $ | 1000 | MOSFET N-CH 55V 80A TO262... |
| IPI80N04S303AKSA1 | Infineon Tec... | 1.04 $ | 1000 | MOSFET N-CH 40V 80A TO262... |
| IPI80N06S3L06XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-26... |
| IPI80N06S2L11AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO262... |
| IPI80N04S304AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO262... |
| IPI80P04P4L04AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
| IPI80N06S3-05 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO-26... |
| IPI80N06S4L07AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO262... |
| IPI80N04S2H4AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO262... |
| IPI80N06S2L05AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO262... |
| IPI80N06S208AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO262... |
| IPI80P03P4L04AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 80A TO262... |
| IPI80N08S406AKSA1 | Infineon Tec... | 1.12 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
| IPI80P04P4L06AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
| IPI80N06S2L05AKSA2 | Infineon Tec... | 1.2 $ | 1000 | MOSFET N-CH 55V 80A TO262... |
| IPI80CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 13A TO26... |
| IPI80N04S306AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO262... |
| IPI80N06S407AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO262... |
| IPI80N06S207AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO262... |
| IPI80P04P4L08AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
| IPI80N08S207AKSA1 | Infineon Tec... | 0.87 $ | 1000 | MOSFET N-CH 75V 80A TO262... |
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IPI80N04S403AKSA1 Datasheet/PDF