| Allicdata Part #: | IPI80N06S2L05AKSA1-ND |
| Manufacturer Part#: |
IPI80N06S2L05AKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 80A TO262-3 |
| More Detail: | N-Channel 55V 80A (Tc) 300W (Tc) Through Hole PG-T... |
| DataSheet: |  IPI80N06S2L05AKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | PG-TO262-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
Description
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The IPI80N06S2L05AKSA1 belongs to a type of transistor known as Field Effect Transistor (FET), specifically a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). MOSFETs are used in various electronic and electrical applications including power correction circuits, renewable energy systems, robotics, industrial applications, and aviation systems. They are also used in radio and television transmitters, digital signal processors, and other digital and analog electronic devices. The IPI80N06S2L05AKSA1 is a single MOSFET with a drain-source voltage of 80V, drain current of 8A, and gate drive of 5.5V. It is constructed with a silicon substrate and is equipped with a gate oxide layer. The gate oxide layer is a thin layer of material that serves as an insulation between the MOSFET\'s drain and source, which allows it to switch the current more quickly and efficiently. The IPI80N06S2L05AKSA1 has a maximum junction temperature of 150°C.MOSFETs operate by using a source, drain, and gate. The source and drain are the input and output terminals of the transistor, and the gate is used to control the current flow. The gate is connected to a voltage source, which when applied creates an electromagnetic field that repels majority carriers from the drain, allowing current flow from the source to the drain. When the gate voltage is removed, the repulsive field is halted and the majority carriers quickly return to their original position, thus halting current flow.The IPI80N06S2L05AKSA1 uses low voltage and low current drive to allow switching of high currents, enabling it to be used in a variety of applications. This makes it suitable for use in the automotive industry, home automation systems, and medical electronics. Additionally, its low on-resistance makes it ideal for power switching applications.In conclusion, the IPI80N06S2L05AKSA1 is a single MOSFET with a drain-source voltage of 80V, drain current of 8A, and gate drive of 5.5V. It is capable of switching high currents with low voltage and low current drive, making it suitable for use in a wide range of applications. Its low on-resistance makes it ideal for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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