| Allicdata Part #: | IPI80P04P4L08AKSA1-ND |
| Manufacturer Part#: |
IPI80P04P4L08AKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH TO262-3 |
| More Detail: | P-Channel 40V 80A (Tc) 75W (Tc) Through Hole PG-TO... |
| DataSheet: |  IPI80P04P4L08AKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 120µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | PG-TO262-3-1 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 75W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5430pF @ 25V |
| Vgs (Max): | +5V, -16V |
| Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IPI80P04P4L08AKSA1 is a single power MOSFET that offers high performance and reliable operations for a wide range of applications. It has a breakdown voltage of 300V, a gate threshold voltage of 1.8V, an on resistance of 20mΩ, a total gate charge of 8mC and an avalanche current rating of 20A. The device is ideal for use in switching applications and power management.
Application Field of IPI80P04P4L08AKSA1
IPI80P04P4L08AKSA1 can be used in switching applications such as AC/DC adaptors, DC/DC converters, and brushless DC motor drives. It is also suitable for industrial motor control, automotive motor control, and energy storage systems. Additionally, the device is suitable for cellular power amplifiers, Communications base-stations, and automotive lighting systems as well.
Working Principle of IPI80P04P4L08AKSA1
When used in a switching application, IPI80P04P4L08AKSA1 uses a P-channel enhancement MOSFET structure that has a small gate drive requirement. This structure helps the device to switch efficiently so that it can support a wide range of switching frequencies.
The device also has a low on-state resistance which helps it to decrease losses at higher switching frequencies. This reduces the temperature rise and allows the device to maintain reliable operation over a wider temperature range. In addition, the device has a low gate charge which helps to reduce switching losses and increases system efficiency.
This device also offers a low threshold voltage which helps to reduce power dissipation. This reduces the power loss in the system and increases the system’s efficiency. In addition, the device has a low gate resistance which helps the device to operate at higher frequencies and improves the device’s switching performance.
The IPI80P04P4L08AKSA1 also has a high Avalanche energy rating which helps to increase power handling and system reliability. Additionally, the device has a high frequency operation which helps to reduce system noise and increase system efficiency. This makes the device ideal for use in noise sensitive applications where low noise and low power dissipation are important.
IPI80P04P4L08AKSA1 also has a wide range of protection features to protect the device from overvoltage and current surges. The device also features a large number of stress tolerant features that increase the device’s reliability and long-term performance. This helps the device to operate reliably over a wider temperature and voltage range.
In summary, IPI80P04P4L08AKSA1 is a single power MOSFET that offers high performance and reliable operations for a wide range of applications. Its low on-state resistance, low gate charge, and low gate resistance help to reduce power dissipation and allow the device to maintain reliable operation over a wide temperature range. Additionally, the device has a high avalanche energy rating and a wide range of protection features to protect the device from overvoltage and current surges. This makes the device an ideal choice for use in switching applications and other applications where noise and power efficiency are important.
The specific data is subject to PDF, and the above content is for reference
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