IPI80N03S4L03AKSA1 Allicdata Electronics
Allicdata Part #:

IPI80N03S4L03AKSA1-ND

Manufacturer Part#:

IPI80N03S4L03AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 80A TO262-3
More Detail: N-Channel 30V 80A (Tc) 136W (Tc) Through Hole PG-T...
DataSheet: IPI80N03S4L03AKSA1 datasheetIPI80N03S4L03AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IPI80N03S4L03AKSA1 is a single N-channel enhancement mode MOSFET that can be used in many applications, including in power management, switching and amplifying. It is the latest product of the N-channel enhancement mode MOSFET family, offering good heat resistivity, higher efficiency and low power consumption.

Application Fields

The IPI80N03S4L03AKSA1 single N-channel enhancement mode MOSFET is mainly used in power management, switching and amplifying. It is widely used in many application fields like mobile phone, TV, computer, household electrical appliances, electronic toys, e-cigarettes, smart power meter and other electronics.

Working Principle

The IPI80N03S4L03AKSA1 single N-channel enhancement mode MOSFET works by using specific voltage and resistance. In a MOSFET, the gate and source are too close, so creating an electric field. The electric field enables current to flow through between the gate and the source. This is called “inversion layer”, which is where the current flows through.

When the voltage applied on the gate (called Vgs) is equal to a specific voltage, an inversion layer will be formed and current will flow through it. If the gate voltage is increased further, the inversion layer will produce more current. The gate voltage Vgs represents the switching state of the MOSFET, Vgs = 0V is the off state, Vgs =Vth is the on state.

The strength of the electric field generated between the gate and the source is called Gate Electric Field (Eg), which determines the threshold voltage Vth of the MOSFET. In other words, the higher the Eg is, the higher Vth will be. Therefore, Eg is one of the most important parameters in the MOSFET.

advantages

IPI80N03S4L03AKSA1 single N-channel enhancement mode MOSFET offers good heat resistivity, higher efficiency and low power consumption. It also has low on-state resistance (Rdson), an ability to control high current at a low gate source voltage and to prevent shoot-through. Due to these characteristics, it finds a wide range of use in industrial, telecommunication, automotive and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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