IPI80N04S2H4AKSA1 Allicdata Electronics
Allicdata Part #:

IPI80N04S2H4AKSA1-ND

Manufacturer Part#:

IPI80N04S2H4AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 80A TO262-3
More Detail: N-Channel 40V 80A (Tc) 300W (Tc) Through Hole PG-T...
DataSheet: IPI80N04S2H4AKSA1 datasheetIPI80N04S2H4AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IPI80N04S2H4AKSA1 is a single-channel MOSFET designed for various power management applications. MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) are insulated-gate transistors that are efficient power switches. This allows them to transfer power from a low-voltage source to a higher voltage load quickly and easily, while also providing better control of power than is possible with a traditional bipolar junction transistor or IGBT.

An IPI80N04S2H4AKSA1 has an N-type MOSFET structure, with an N-type regions as the source and drain, and an insulated gate electrode for voltage-controlled magnitude of current flow between the source and drain. In a typical application, the MOSFET is used to switch power from a low-voltage power supply to a higher-voltage load. When a potential difference is applied to the gate, the current between the source and drain is controlled depending on the magnitude of the gate voltage. This makes it ideal for power management applications, where the voltage and current delivered to the load must be properly regulated, without power being dissipated as heat.

An important characteristic of an IPI80N04S2H4AKSA1 is its low threshold voltage, which makes it suitable for use in low-power applications. This voltage is the minimum voltage at which the MOSFET begins to conduct. The lower threshold voltage is beneficial in applications such as LED lighting and automotive systems, where the power supply can be operating at a lower voltage. Moreover, the IPI80N04S2H4AKSA1 also features several other characteristics, such as a low junction capacitance, which helps reduce switching losses, and a low on-resistance, which results in lower power losses when switched off.

The IPI80N04S2H4AKSA1 is an ideal solution for designers looking for an efficient and cost-effective power management solution. It is suitable for a wide range of applications, from LED lighting, to automotive systems and IoT (Internet of Things) applications, due to its low threshold voltage and other desirable characteristics. The IPI80N04S2H4AKSA1 is easy to use and offers excellent performance in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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