IPI80N06S407AKSA2 Allicdata Electronics
Allicdata Part #:

IPI80N06S407AKSA2-ND

Manufacturer Part#:

IPI80N06S407AKSA2

Price: $ 0.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 80A TO262-3
More Detail: N-Channel 60V 80A (Tc) 79W (Tc) Through Hole PG-TO...
DataSheet: IPI80N06S407AKSA2 datasheetIPI80N06S407AKSA2 Datasheet/PDF
Quantity: 1000
500 +: $ 0.78266
Stock 1000Can Ship Immediately
$ 0.87
Specifications
Vgs(th) (Max) @ Id: 4V @ 40µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IPI80N06S407AKSA2 is an enhancement mode, N-channel, vertical Diffused MOSFET. It has multiple applications in various electronic systems and is widely used due to its effectiveness and reliability.IPI80N06S407AKSA2s can be used as a power switch or as an amplifier in electronic circuits. For example, it can be used to reduce or increase the current or voltage in an electronic circuit, or to control the current or voltage flowing through the circuit. It is mainly used in power switching applications such as motor control systems, LED dimmer control, etc. and amplifier circuits.The working principle of IPI80N06S407AKSA2 is based on the majority charge carriers, i.e. electrons and holes, travelling through a MOSFET device. When a voltage is applied to the gate of the MOSFET, the electrons and holes are attracted towards the gate. This creates an electric field, which results in the change in the electrical properties of the MOSFET and consequent change in the current flow through it.The structure of IPI80N06S407AKSA2 comprises of an N-channel MOSFET, a bypass capacitor and a drain and source terminal. The N-channel MOSFET is a semiconductor device and it works similar to other transistors. The bypass capacitor is connected to the gate terminal of the MOSFET which helps in providing stability to the device. The drain and source terminals are connected to the target circuit and the voltage and current levels can be adjusted by varying the voltage applied to the gate terminal.The IPI80N06S407AKSA2 is known for its low on-resistance and low gate capacitance features. This helps in better performance and also helps in reducing the switching time. The device also has a high blocking voltage rating which helps in controlling higher voltages.The IPI80N06S407AKSA2 is usually used in conjunction with resistors and load capacitors to control the current or voltage in the circuits. It is important to carefully choose the components to ensure the correct working of the circuit. The device is also used in power supplies to reduce the amount of electrical energy used in the system and also to regulate the supply voltage and current.The IPI80N06S407AKSA2 device is very efficient and reliable, and it is compatible with various types of circuits. It is easy to install and is available in various size packages, which makes it ideal for a wide variety of applications. Its use helps in building a better, more reliable and efficient system.

The specific data is subject to PDF, and the above content is for reference

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