IPI80P04P407AKSA1

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IPI80P04P407AKSA1 is an MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) in a single package that is suitable for various applications. The device used is a planar double-diffused MOS (DMOS) technology providing superior features such as reduced gate charge and output resistance as well as lower input capacitance.

The basic electrical characteristics of the IPI80P04P407AKSA1 are a drain-source voltage (V_dss) of 400 volts, a maximum drain current (I_d) of 80 amps and a drain-source on-state resistance (R_ds) of 0.4 ohms. The breakdown voltage (BV_dss) is 500 volts, the threshold voltage (V_th) is 2.0 volts and the maximum power dissipation is 111 watts.

This device\'s features can provide a wide range of applications including power switches, load switches, motor control, and lighting controls. Additionally, since this device has a reduced gate charge and output resistance, it is ideally suited for high-frequency applications, making it a great choice for RF applications such as cellular phones and other wireless communications.

Working Principle

The MOSFET used in the IPI80P04P407AKSA1 is a three-terminal device that consists of a source, drain and gate. The gate is insulated from the substrate by a thin layer of metal-oxide, which ensures that no current can flow from the gate to the drain. The source is connected to the negative voltage supply, and the drain is connected to the positive voltage supply.

In the on-state, a positive voltage is applied to the gate which in turn opens a channel between the source and the drain. When current is allowed to flow through this channel, the MOSFET is said to be in its linear region. In the linear region, the current (I_d) is proportional to the voltage applied to the gate (V_gs).

In the off-state, a negative voltage is applied to the gate which in turn shuts off the channel and no current can flow between the source and the drain, thus the MOSFET is said to be in its cut-off region.

In the saturation region the MOSFET is said to be fully on and no further increase in voltage at the gate can increase the current any further. This is known as the pinch-off voltage (V_p).

Apart from the linear, cutoff and saturation regions, the IPI80P04P407AKSA1 also has a fourth region in between the linear and cutoff regions. This is called the protection region wherein the MOSFET will shut off the current if an over-current or over-voltage condition arises. This helps to protect the device from damage.

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