IPI80N06S208AKSA1 Allicdata Electronics
Allicdata Part #:

IPI80N06S208AKSA1-ND

Manufacturer Part#:

IPI80N06S208AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A TO262-3
More Detail: N-Channel 55V 80A (Tc) 215W (Tc) Through Hole PG-T...
DataSheet: IPI80N06S208AKSA1 datasheetIPI80N06S208AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 215W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IPI80N06S208AKSA1 is a single N-channel Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) available in a TO-220AB package. It is commonly used in switch mode power supplies and other applications such as lighting and commercial motor control.

The IPI80N06S208AKSA1 is a fully-depleted enhancement mode device and is specially designed to minimize work loss. It features high output impedance, low leakage current, wide operational temperature range, low operating voltage and high peak pulse current capability.

The IPI80N06S208AKSA1 is a commonly used MOSFET device because it is relatively low cost and is capable of delivering high performance. It is suitable for both analogue and digital circuits, for applications such as DC-DC conversion, load switching, voltage regulation, motor speed control and over-load protection.

The device is capable of operating with very low gate capacitance and drain-source capacitance. It offers high input impedance and low output impedance, as well as withstanding high voltages and temperatures. Due to its high switching rate, it is also capable of handling large currents with very little energy loss.

The working principle of the IPI80N06S208AKSA1 is based upon the principles of MOSFET operation. In particular, the gate voltage applied to the device is used to control the current flowing through the drain-source channel. When a positive voltage is applied to the gate, it attracts negative charge carriers (holes) from the substrate, thus creating a channel through which a current can flow.

When the gate voltage is removed, the channel closes and no current can flow. The amount of current that can be controlled by the device is determined by its size and drain-source voltage. In applications such as switch mode power supplies, this can be used to switch large currents in and out of a circuit very quickly and with very little energy loss.

The IPI80N06S208AKSA1 is a single N-channel MOSFET device which is used in switch mode power supplies, lighting and commercial motor control. It has low gate capacitance, low drain-source capacitance, wide operational temperature range and high peak pulse current capability. The device is capable of controlling large currents with very little energy loss, due to its high switching rate. Its working principle is based upon the principles of MOSFET operation and its gate voltage is used to control the current flowing through the drain-source channel.

The specific data is subject to PDF, and the above content is for reference

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