IPI80N06S4L05AKSA1 Allicdata Electronics
Allicdata Part #:

IPI80N06S4L05AKSA1-ND

Manufacturer Part#:

IPI80N06S4L05AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 80A TO262-3
More Detail: N-Channel 60V 80A (Tc) 107W (Tc) Through Hole PG-T...
DataSheet: IPI80N06S4L05AKSA1 datasheetIPI80N06S4L05AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPI80N06S4L05AKSA1 is part of a family of single source field effect transistors (FETs) developed by Infineon Technologies. It is manufactured using a conventional Schottky process and provides an excellent choice of solution when it comes to power management applications, such as switching between power sources in low voltage systems or providing efficient direction control in power converters. With its attractive features, including low on-resistance, high-speed switching, low capacitance, and excellent thermal stability, the IPI80N06S4L05AKSA1 is an invaluable component to any device requiring such capabilities.

The IPI80N06S4L05AKSA1 works by taking advantage of the fact that electrons and holes in a semiconductor can be controlled and moved by applying an electric field. The device consists of an N-type source region, a P-type drain region, and a physically separated P+ region in between the source and drain regions. The source and drain regions are connected through an insulated gate structure and when a voltage is applied across these regions, the charge carriers (electrons and holes) can move from source to drain and vice versa, thus creating a flow of current that can be modulated. As the charge carriers move, a power field is generated between the source and drain which acts on the electrons and holes and is used to control the device.

The IPI80N06S4L05AKSA1 is commonly used in power management and switching circuits, providing a simple and efficient way to switch between power sources or to provide direction control in converters. It finds application in a variety of automation systems and motor control circuits, and can be used to optimize battery lifetime and improve the efficiency of low voltage systems. It is also beneficial in motion and speed control applications, as it allows for very fast response times with minimal start-up delays. Furthermore, the device has excellent temperature stability, making it well suited for use in extreme temperature environments.

In conclusion, the IPI80N06S4L05AKSA1 is an invaluable component when it comes to power management applications, including those that require fast response times. It offers excellent performance and temperature stability, making it highly suitable for harsh environments. It is ideal for use in automated systems, motor control circuits, power switching, and converters, and can significantly improve the efficiency of low voltage systems.

The specific data is subject to PDF, and the above content is for reference

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