IPI80N04S204AKSA1

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The IPI80N04S204AKSA1 is a power metal oxide semiconductor field effect transistor (MOSFET). It is designed for use in applications that require high power output and devices with low on-resistance. This MOSFET is commonly used in high-power switching applications such as power converters, voltage switching and motor control. It is also used in motor control, automotive electronics and energy storage systems.

The IPI80N04S204AKSA1 has an electrical parameter rating of 9A, 8-0.020, and 4-0.030. Its gate-source threshold voltage is rated at 4.5-7.0V and its drain-source breakdown voltage is rated at 12-20V. The maximum junction temperature at which it can operate safely is 175°C. The maximum allowable drain current for this device is 500mA, and the maximum continuous source-drain voltage is 20V. The gate-source voltage that should be applied to the device is -8V to -24V.

A MOSFET operates in three different modes depending on the gate-source voltage applied. The three modes of operation are cutoff mode, linear mode and saturation mode. In cutoff mode, the MOSFET acts as an open switch and no current flows through the drain-source. In linear mode, some current may flow through the device, depending on the gate-source voltage. In saturation mode, the MOSFET acts as a closed switch and the current through the device is its rated drain current. The IPI80N04S204AKSA1 typically operates in saturation mode.

The working principle of the MOSFET is based on the amount of charge stored on the gate terminal. When a positive gate-source voltage is applied to the gate terminal, the charge on the gate increases and forms a capacitive effect that modulates the width of the depletion region between source and drain. This decreasing width of the depletion region reduces the resistance between source and drain, allowing current to flow from drain to source. Thus, the operation of the MOSFET is based on the gate-source voltage applied to the device.

The IPI80N04S204AKSA1 is built using high-power silicon MOSFETs that are designed for use in applications requiring high current. The use of advanced process technologies allow for a design that reduces switching losses, increases efficiency, and provides excellent protection against over-voltage and over-current conditions. The use of metal-oxide-semiconductor trench devices also makes the IPI80N04S204AKSA1 ideal for use in applications requiring a low on-resistance while providing enhanced power management.

The IPI80N04S204AKSA1 is a power metal-oxide-semiconductor FET (MOSFET) designed for high power switching applications. It has a high current rating, low drain-source on-resistance, and is capable of operating at high junction temperatures. Its operation is based on the gate-source voltage applied to the device, and it typically operates in saturation mode. The use of advanced process technologies and metal-oxide-semiconductor trench devices allow the device to have excellent protection against over-voltage and over-current conditions while providing enhanced power management.

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