IPI90N04S402AKSA1

Vgs(th) (Max) @ Id:	4V @ 95µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9430pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	118nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The IPI90N04S402AKSA1 is a N-channel enhancement mode field effect transistor that is specifically designed for power management applications. It has a very low on-resistance, high utility density, and cost-effective packaging that makes the IPI90N04S402AKSA1 an ideal choice for electronic system designers. In this article, we\'ll explore the application field and working principle of this device in detail.

Application Field

The IPI90N04S402AKSA1 is a power field-effect transistor (FET) designed for high-speed switching applications. It can be used in high-current, high-frequency applications such as power supplies, motor control, and lighting systems. Due to its low on-resistance and high-speed switching capabilities, the IPI90N04S402AKSA1 can handle high current loads efficiently.The IPI90N04S402AKSA1 is also well-suited for switching DC-DC converters. This device features an integrated gate drive circuit that makes it easy to control the current and switch the FET. The IPI90N04S402AKSA1 also has a high breakdown voltage that allows it to handle higher voltages with ease.

Working Principle

The working principle of the IPI90N04S402AKSA1 is based on the principle of operation of other FETs. It works by using a reverse gate bias to form a conductive channel between the drain and source electrodes. The size of this channel is controlled by the gate bias, which is a voltage applied across the gate and source electrodes. When the gate voltage is increased, the size of the channel increases, allowing for higher current flow. When the gate voltage is decreased, the size of the channel decreases, limiting the current flow.The IPI90N04S402AKSA1 has a low on-resistance, which means that there is less voltage drop across the device and therefore, efficiency is higher. In addition, the integrated gate drive circuit allows the IPI90N04S402AKSA1 to switch faster, which reduces switching losses and improves overall system efficiency.

Conclusion

In conclusion, the IPI90N04S402AKSA1 is a high-performance power field-effect transistor (FET) specifically designed for power management applications. It has a low on-resistance, high utility density and cost-effective packaging, making it an ideal choice for electronic system designers. The working principle of the IPI90N04S402AKSA1 is based on the principle of operation of other FETs, wherein a reverse gate bias is used to form a conductive channel between the drain and source electrodes. The integrated gate drive circuit allows for faster switching of the FET, resulting in higher system efficiency.

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