
Allicdata Part #: | IPI90N06S4L04AKSA1-ND |
Manufacturer Part#: |
IPI90N06S4L04AKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 90A TO262-3 |
More Detail: | N-Channel 60V 90A (Tc) 150W (Tc) Through Hole PG-T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 90µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13000pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IPI90N06S4L04AKSA1 is a single-channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) which utilizes a vertical structure, is efficient, low-on-resistance, has excellent performance and is versatile. It is mainly used in small-signal and power switch applications, motor drive circuits, power management circuits and high-frequency switching power supplies.
A MOSFET is an insulated-gate type transistor that works as both a switch and an amplifier. The primary benefit of this type of transistor is its ability to switch quickly with low ON-resistance. It consists of four major terminals; the source, drain, gate and body. The source and drain are normally connected to a circuit or load, the gate is used to control the operation of the transistor and the body is used to connect to the ground.
In the case of IPI90N06S4L04AKSA1, the four terminals are the source, drain, gate and back gate. The IPI90N06S4L04AKSA1 has a maximum drain-source voltage of 90V and a breakdown voltage of 150V. It also has a very low On-Resistance of 0.04mΩ and an excellent thermal resistance of <35K/W. Additionally, it has a maximum current rating of 11A and a maximum power dissipation of 340mW.
The working principle of the IPI90N06S4L04AKSA1 is relatively simple. When a positive voltage is applied to the gate, electrons are pulled from the source and negative charges are generated near the gate. This causes the formation of an electric field between the source and the drain, which allows current to flow from source to drain. When the voltage is removed from the gate, the electric field dissipates, and the current ceases.
The IPI90N06S4L04AKSA1 is a versatile device and is used in many applications due to its fast switching capabilities, low ON-resistance, and excellent thermal performance. Common applications include: lighting, power management, motor drive circuits, hot-swap controllers, load switches and AC-DC converters. As the device is a single-channel MOSFET, it can be used in multiplex applications where it is necessary to control multiple channels with a single device. Additionally, the IPI90N06S4L04AKSA1 is also suitable for high-frequency switching, making it an ideal choice for a wide range of applications.
In conclusion, the IPI90N06S4L04AKSA1 is a single-channel MOSFET. It has several advantages such as low ON-resistance and excellent thermal characteristics, making it suitable for a wide range of applications. These include power management circuits, motor drive circuits, lighting applications, hot-swap controllers, load switches, and AC-DC converters. Additionally, the device is also suitable for high-frequency switching.
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