IPI90R800C3

Gate Charge (Qg) (Max) @ Vgs:	42nC @ 10V
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 100V
Vgs (Max):	±20V
Series:	CoolMOS™
Vgs(th) (Max) @ Id:	3.5V @ 460µA
Rds On (Max) @ Id, Vgs:	800 mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.9A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete

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IPI90R800C3 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed to operate under high temperatures up to 125-degrees Celsius and a wide range of voltages (80-volt to 900-volt). This article will explore the application field and working principle of this unique transistor.

Application Field

The IPI90R800C3 is used in a wide variety of applications, from high-power switching applications to power conversion. It is particularly well-suited for use in DC-DC converters where its high operating temperature range allows it to stay reliable and efficient despite the high temperatures present in power electronics applications. It is also suitable for use in automotive and industrial systems, where its 8A current rating makes it a capable switching component.

Working Principle

The working principle of the IPI90R800C3 is based on the same principles that all MOSFETs follow: when a voltage is present in the gate of the transistor, a current is allowed to flow between the drain and source. This current then causes the transistor to turn “on”, and the current is switched on. This allows a circuit designer to control large currents with a small signal applied to the gate. The IPI90R800C3 is unique from other MOSFETs in that it is rated for high voltages and temperatures due to its silicone-based construction. The condition enhanced silicon oxide layer coupled with a low on-resistance MOSFET component design allow for operation of up to 900 volts and over 125 degrees Celsius, meaning that this FET is suitable for use in challenging and hot environments. The IPI90R800C3 is also rated for a peak current of 8A at 80V, meaning that it is suitable for use in high power applications. This combination of high voltage and current handling capabilities with its durable construction make this component ideal for a variety of high power applications.

Conclusion

The IPI90R800C3 is a type of MOSFET designed for high temperatures and voltages and is suitable for a variety of switching and power conversion applications. It is well-suited for use in DC-DC converters and other high power applications due to its silicone-based construction, high temperature range, and 8A current rating. With its combination of high voltage and current handling capabilities, the IPI90R800C3 is an excellent choice for challenging and demanding applications.

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