IPI90R1K2C3XKSA1 Allicdata Electronics

IPI90R1K2C3XKSA1 Discrete Semiconductor Products

Allicdata Part #:

IPI90R1K2C3XKSA1-ND

Manufacturer Part#:

IPI90R1K2C3XKSA1

Price: $ 0.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 900V 5.1A TO-262
More Detail: N-Channel 900V 5.1A (Tc) 83W (Tc) Through Hole PG-...
DataSheet: IPI90R1K2C3XKSA1 datasheetIPI90R1K2C3XKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 0.67452
Stock 1000Can Ship Immediately
$ 0.75
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPI90R1K2C3XKSA1 transistor is an asymmetrical dual-channel device commonly used in amplifier, switching, and voltage level-shifting circuits. It has two branches connected in series, one channel being the source while the other channel is the drain. Of these, the drain is typically equipped with a higher breakdown voltage, which makes it effective in numerous applications.

These transistors are used in many different types of circuits, such as amplifier circuits, level shifting circuits, switching circuits, rectifier circuits, and power supply circuits. Some specific applications include:

  • Power supplies: These devices are effective for power supply circuits, providing a reliable source for a steady stream of current with a minimum of switching components.
  • Amplifier circuits: These devices can be used to provide high-gain amplifiers, typically driving transistor current through the gate-drain junction.
  • Level shifting circuits: These transistors are also used in level shifting applications, as it allows for a varied voltage range.
  • Rectifier circuits: They are useful components in rectifier circuits, allowing for steady supply of current even when the device is subjected to a wide voltage range.
  • Switching circuits: These devices are also frequently used in switching circuitry, and are able to deliver significant current in a very limited space.

The working principle behind the IPI90R1K2C3XKSA1 is relatively straightforward. It consists of two fins, one forming a channel and the other a gate. These two fins act together to control the current flow in the channel. The fin that forms the channel is known as the source, while the fin that is the gate is known as the drain. The source has a lower breakdown voltage, allowing current to pass through it more easily, while the drain has a higher breakdown voltage, allowing it to control the current flow more closely.

The way the IPI90R1K2C3XKSA1 works is relatively simple. When a gate voltage is applied, the source acts as a resistance to the flow of current. When the voltage is increased, the source allows for more current to flow, which in turn increases the overall current flowing through the circuit. This effect can then be used to control the flow of current through the device, which can be used to power the circuit.

In addition to the variety of applications listed above, these transistors are also extremely popular in robotics and other forms of automation, as they can provide a reliable means of controlling motors and other hardware. They can also be used to control the voltage and current level of a circuit, making them an effective and efficient option for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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