IPI90R500C3XKSA1 Allicdata Electronics
Allicdata Part #:

IPI90R500C3XKSA1-ND

Manufacturer Part#:

IPI90R500C3XKSA1

Price: $ 1.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 900V 11A TO-262
More Detail: N-Channel 900V 11A (Tc) 156W (Tc) Through Hole PG-...
DataSheet: IPI90R500C3XKSA1 datasheetIPI90R500C3XKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 1.37621
Stock 1000Can Ship Immediately
$ 1.53
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The N-channel enhancement mode MOSFET IPI90R500C3XKSA1 is a power supply switch intended for a variety of power switching applications. It features an incredibly low on-resistance, making it suitable for applications requiring higher power efficiency and high current flow.

The IPI90R500C3XKSA1 is a high-performance power supply switch designed to provide both high efficiency and power density. The device consists of a MOSFET with a maximum voltage rating of 30V and a current rating of up to 5A. The device is well suited for a wide range of power switching applications, including power switch pre-charge and startup delay functions, as well as battery-backed logic power switching.

The device features an incredibly low on-resistance, which is < 10mΩ at 25°C, resulting in an extremely low minimum impedance and low losses while switching. This improves the overall efficiency of the power supply circuit, making it ideal for applications such as automotive, power supply and motor control.

The IPI90R500C3XKSA1 also features low input capacitance, which allows for quick turn-on and turn-off times. This improves the performance of the device, making it more responsive in high frequency switch modes. Additionally, the device features built-in temperature sensing, allowing it to adjust its performance to changes in temperature.

The IPI90R500C3XKSA1’s low on-resistance, low input capacitance and inherent temperature sensing, make it an excellent choice for power supply and motor control applications. The device’s fast switching and low power losses provide improved efficiency and power density, making it ideal for a variety of power switching applications.

The working principle of the IPI90R500C3XKSA1 is based on the enhancement mode of MOSFETs, which operate in the saturated region, with no bias voltage or gate current required. Instead, the drain voltage alone controls the level of output, and the device will be in a strong conduction state whenever the drain voltage exceeds the threshold voltage. This makes the device inherently reliable and stable, since there is no unpredictable variation in the threshold voltage.

The IPI90R500C3XKSA1 is an excellent choice for a variety of applications, such as automotive, power supply, motor control and pre-charge systems. The device’s low on-resistance and low input capacitance ensures excellent performance, while its inherent temperature sensing ensures the device’s reliability. Furthermore, the device’s inbuilt temperature sensing and fast switching speed make it suitable for high frequency switch modes and high current flows.

The specific data is subject to PDF, and the above content is for reference

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