IPI90R1K0C3XKSA1

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The IPI90R1K0C3XKSA1 is a single n-channel enhancement mode Field Effect Transistor (FET). This transistor is a long-channel device which is also often referred to as a super FET and is suitable AEC-Q101 qualified applications. The device is mainly used in a wide range of applications, from motor control and power management, to general purpose output/input switch applications.

The device is constructed in an International Rectifier advanced process which uses state-of-the-art insulated gate technology. It is designed in a single dual-side cooled, thermally enhanced package, offering supreme thermal conduction and an optimal performance for use in all types of automotive applications, such as those using high-pressure systems. Due to its ESD protection on all drain, gate and source pins, it ensures a high level of reliability.

The IPI90R1K0C3XKSA1 offers a low gate threshold and drain-source resistance which makes it suitable for high frequency, high temperature, or high voltage applications. It is also capable of supplying a higher maximum drain current than regular enhancement mode FETs. In addition, this FET is multipurpose, and can be used in switch, amplifier, and load regulatory circuits.

The key features of this single n-channel FET are: a low gate threshold and on-resistance making it suitable for high frequency and high temperature applications, an advanced body-diode compensating technology allowing the switch ON/OFF transition to be achieved quickly, a triangular-shaped body under the gate allowing the device to be used in both normal and inverted modes, and a wide range of drain current ratings and voltage ratings.

The device features an operating voltage of 20 V, a drain-source breakdown voltage of 500 V, a drain current of 4 A, a gate-source voltage range of -30 V to +25 V and an on-resistance of 1.5 Ω. The power rating for this device is 8 W. The device is also capable of supplying a current of 10 A if used in a switch configuration.

The working principle of the IPI90R1K0C3XKSA1 is based on the fact that a current flow will follow an electric field. To create an electric field, an external voltage is applied to the gate of the FET which creates a capacitive effect. This capacitive effect instantly increases the conductivity of the channel, allowing a current to flow across it. This is known as Junction Field Effect and is the essence of all FETs. This enables the device to control the voltage and the current flow of the system.

Overall, the IPI90R1K0C3XKSA1 is a single n-channel enhancement mode FET, suitable for a wide range of automotive applications. It is constructed in an advanced process which features ESD protection on all drain, gate, and source pins. The device offers excellent thermal conduction, low gate threshold and drain-source resistance, making it suitable for high frequency, high temperature, and high voltage applications. Additionally, the device is capable of supplying a current rating of up to 10 A if used in a switch configuration, offering a power rating of up to 8 W.

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