IPI90R340C3XKSA1

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IPI90R340C3XKSA1 are a type of enhancementmode power metal oxide semiconductor field effect transistor (MOSFETs). It is a single gate device with high gate performance. Being one of the sophisticated devicesthat make use of the semiconductor-based technology, these power metal oxidefield effect transistors have various features, such as low on-stateresistance, high switching speed, low gate charge and excellent gate charge todrain current ratio. They are used in consumer electronics and other hightemperature and/or high frequency applications.

Application Field of IPI90R340C3XKSA1

IPI90R340C3XKSA1 power MOSFETs find use inwide range of applications. These include motor drive, lighting, audioamplifiers, battery powered equipment and digital power supplies. They areprimarily used for switching operations and are suitable for low voltage andcurrent applications, such as for voltage regulators, battery chargers, andswitching power supplies. The plastic packages of the transistors makes themideal for space-restricted or environmentally sensitive applications.

IPI90R340C3XKSA1 power MOSFETs also find applicationin automotive applications, such as neutral start switches, encoders andsolenoid drivers. They are ideal for high frequency power conversion and ACDCpower supplies, where they can be used as switches and high side drivers. InDCDC converters, they find application in synchronous rectifiers and inverters.Besides consumer electronics, they are also used in a range of industrialapplications, such as switching power supplies, motor control, andtelecommunications.

Working Principle of IPI90R340C3XKSA1

IPI90R340C3XKSA1 power MOSFETs are based on modern semiconductor technologies and theelectromechanical properties of metals. The devices are designed to switchbetween two different voltage levels using a low voltage gate. These powerMOSFETs consists of a gate and two drain electrodes, which are connected witha semiconductor material known as a ‘channel’. The gate controlsthe current through the MOSFET and can be used to switch between two states;ON or OFF. The current flow in the MOSFET is triggered by the application of avoltage to the gate, which causes the current to flow through the channel,from the source to the drain.

The power aspect of a power MOSFET is enabled byits wide range of operating frequency and robustness. It has a uniquecharacteristic, termed as ‘body effect’, which allows thedevice to reduce its effective conductivity. This body effect is produced, when asmall negative voltage is applied to the drain and, as a result of this, theconductance of the channel is decreased. The effect is increased when thesmall negative voltage is increased, thus providing a better control. Thisadvantageous effect is very important in powering applications and itmaintains the low power dissipation of the device as compared to analogswitch technology.

In conclusion,IPI90R340C3XKSA1 areMOSFETs with a single gate. These power MOSFETs have various features, such aslow on-state resistance, high switching speed, low gate charge and excellentgate charge to drain current ratio, which makes them ideally suited for highfrequency applications, such as DCDC converters and motor control. They areideal for high power switching applications and for use in space-restricted orenvironmentally sensitive applications.

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