Allicdata Part #: | IPI90N06S4L04AKSA2-ND |
Manufacturer Part#: |
IPI90N06S4L04AKSA2 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 80A TO262-3 |
More Detail: | N-Channel 60V 90A (Tc) 150W (Tc) Through Hole PG-T... |
DataSheet: | IPI90N06S4L04AKSA2 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.11979 |
Vgs(th) (Max) @ Id: | 2.2V @ 90µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13000pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPI90N06S4L04AKSA2 is a type of transistor - specifically, a field-effect, single transistor (FETs, MOSFETs - Single). It is a silicon-based transistor with a maximum drain-source voltage of 600V. It has an on-resistance value of 4 mOhm and an ultra-low gate charge of 14.5 nC. It is also capable of a high-current handling capacity of 90A.
The IPI90N06S4L04AKSA2 is used in many different applications. It is primarily used in areas where a high-power and low-cost solution is desired such as automotive and industrial applications. For example, it can be found in lighting, audio, power supply, automotive, and many more applications. It is also used in areas where reliable operation and protection is important such as protection circuits. Applications of the IPI90N06S4L04AKSA2 are extremely wide and varied.
The working principle of the IPI90N06S4L04AKSA2 is based on the principle of a field-effect transistor (FETs). A FET is basically a voltage-controlled semiconductor device that is used as a switch. It is made up of one semiconductor layer (the channel) between two metallic layers (the source and drain). The channel has two conducting terminals, the source and drain, which are connected to a voltage source. In a FET, the voltage at the gate controls the flow of current between the two terminals. The IPI90N06S4L04AKSA2 is an N-channel FET, meaning that a negative voltage applied to the gate will cause the channel to become conducting, allowing current to pass through. A positive voltage will close the channel, preventing current from passing.
The IPI90N06S4L04AKSA2 has a high-power output and ultra-low gate charge which makes it the perfect choice for applications that require a reliable, high-power, and low-cost solution. Additionally, its advanced protection provides a superior level of protection in sensitive applications. The IPI90N06S4L04AKSA2 is an ideal choice for applications where reliable, high-power, and low cost solutions are needed.
In conclusion, the IPI90N06S4L04AKSA2 is a type of field-effect single transistor (FETs, MOSFETs - Single). It is an ideal choice for applications that require a reliable, high-power, and low-cost solution. The transistor works on the principle of a field-effect transistor, where the voltage at the gate controls the flow of current between the two terminals. It is used in many different applications such as automotive, industrial, protection circuits, and more. With its high-power output, low gate charge, and advanced protection, the IPI90N06S4L04AKSA2 is the perfect choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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